Infineon AIM SiC N-Channel MOSFET, 17 A, 1200 V, 4-Pin PG-TO247-4 AIMZH120R160M1TXKSA1

RS Stock No.: 349-381Brand: InfineonManufacturers Part No.: AIMZH120R160M1TXKSA1
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

17 A

Maximum Drain Source Voltage

1200 V

Series

AIM

Package Type

PG-TO247-4

Mounting Type

Through Hole

Pin Count

4

Channel Mode

Enhancement

Number of Elements per Chip

1

Transistor Material

SiC

Country of Origin

China

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Stock information temporarily unavailable.

AED 45.41

AED 45.41 Each (ex VAT)

AED 47.68

AED 47.68 Each (inc. VAT)

Infineon AIM SiC N-Channel MOSFET, 17 A, 1200 V, 4-Pin PG-TO247-4 AIMZH120R160M1TXKSA1

AED 45.41

AED 45.41 Each (ex VAT)

AED 47.68

AED 47.68 Each (inc. VAT)

Infineon AIM SiC N-Channel MOSFET, 17 A, 1200 V, 4-Pin PG-TO247-4 AIMZH120R160M1TXKSA1
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QuantityUnit price
1 - 9AED 45.41
10 - 99AED 42.00
100 - 499AED 39.64
500 - 999AED 37.64
1000+AED 34.70

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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

17 A

Maximum Drain Source Voltage

1200 V

Series

AIM

Package Type

PG-TO247-4

Mounting Type

Through Hole

Pin Count

4

Channel Mode

Enhancement

Number of Elements per Chip

1

Transistor Material

SiC

Country of Origin

China

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more