N-Channel MOSFET, 195 A, 409 A, 40 V, 3-Pin TO-220AB Infineon AUIRFB8409

RS Stock No.: 787-0985PBrand: InfineonManufacturers Part No.: AUIRFB8409
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Technical Document

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

195 A, 409 A

Maximum Drain Source Voltage

40 V

Package Type

TO-220AB

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

1.3 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.9V

Minimum Gate Threshold Voltage

2.2V

Maximum Power Dissipation

375 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Length

10.67mm

Typical Gate Charge @ Vgs

300 nC @ 10 V

Width

3.43mm

Transistor Material

Si

Series

COOLiRFET

Minimum Operating Temperature

-55 °C

Height

9.02mm

Product details

COOLiRFET™ Power MOSFET, Infineon

Infineon's Automotive-qualified COOLiRFET™ Power MOSFETs achieve very low on-resistance (RDS(on)), very low conduction loss, resulting in highly efficient switching speeds of high current signals. They deliver higher efficiency, power density and reliability in harsh signal environments with robust avalanche performance, low conduction losses, fast switching speeds, and 175°C maximum junction temperature.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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AED 25.85

Each (Supplied in a Tube) (ex VAT)

AED 27.142

Each (Supplied in a Tube) (inc VAT)

N-Channel MOSFET, 195 A, 409 A, 40 V, 3-Pin TO-220AB Infineon AUIRFB8409
Select packaging type

Production pack (Tube)

Select packaging type

Standard - each

Available in multiples of 2.

Production -

Available in multiples of 2.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

2

Available in multiples of 2
2AED 51.70
4AED 103.40
6AED 155.10
8AED 206.80
10AED 258.50
12AED 310.20
14AED 361.90
16AED 413.60
18AED 465.30
20AED 423.00
22AED 465.30
24AED 507.60
26AED 549.90
28AED 592.20
30AED 634.50

AED 25.85

Each (Supplied in a Tube) (ex VAT)

AED 27.142

Each (Supplied in a Tube) (inc VAT)

N-Channel MOSFET, 195 A, 409 A, 40 V, 3-Pin TO-220AB Infineon AUIRFB8409
Stock information temporarily unavailable.
Select packaging type

Production pack (Tube)

Select packaging type

Standard - each

Available in multiples of 2.

Production -

Available in multiples of 2.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

2

Available in multiples of 2
2AED 51.70
4AED 103.40
6AED 155.10
8AED 206.80
10AED 258.50
12AED 310.20
14AED 361.90
16AED 413.60
18AED 465.30
20AED 423.00
22AED 465.30
24AED 507.60
26AED 549.90
28AED 592.20
30AED 634.50

Buy in bulk

quantityUnit pricePer Tube
2 - 18AED 25.85AED 51.70
20 - 38AED 21.15AED 42.30
40 - 98AED 20.05AED 40.10
100 - 498AED 18.45AED 36.90
500+AED 15.70AED 31.40

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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Click here to find out more

Technical Document

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

195 A, 409 A

Maximum Drain Source Voltage

40 V

Package Type

TO-220AB

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

1.3 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.9V

Minimum Gate Threshold Voltage

2.2V

Maximum Power Dissipation

375 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Length

10.67mm

Typical Gate Charge @ Vgs

300 nC @ 10 V

Width

3.43mm

Transistor Material

Si

Series

COOLiRFET

Minimum Operating Temperature

-55 °C

Height

9.02mm

Product details

COOLiRFET™ Power MOSFET, Infineon

Infineon's Automotive-qualified COOLiRFET™ Power MOSFETs achieve very low on-resistance (RDS(on)), very low conduction loss, resulting in highly efficient switching speeds of high current signals. They deliver higher efficiency, power density and reliability in harsh signal environments with robust avalanche performance, low conduction losses, fast switching speeds, and 175°C maximum junction temperature.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more