N-Channel MOSFET, 240 A, 397 A, 40 V, 7-Pin D2PAK Infineon AUIRFS8408-7P
Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
240 A, 397 A
Maximum Drain Source Voltage
40 V
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
7
Maximum Drain Source Resistance
1 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.9V
Minimum Gate Threshold Voltage
2.2V
Maximum Power Dissipation
294 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
10.67mm
Typical Gate Charge @ Vgs
210 nC @ 10 V
Width
9.65mm
Transistor Material
Si
Series
COOLiRFET
Minimum Operating Temperature
-55 °C
Height
4.83mm
Product details
COOLiRFET™ Power MOSFET, Infineon
Infineon's Automotive-qualified COOLiRFET™ Power MOSFETs achieve very low on-resistance (RDS(on)), very low conduction loss, resulting in highly efficient switching speeds of high current signals. They deliver higher efficiency, power density and reliability in harsh signal environments with robust avalanche performance, low conduction losses, fast switching speeds, and 175°C maximum junction temperature.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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AED 17.90
Each (In a Tube of 2) (ex VAT)
AED 18.795
Each (In a Tube of 2) (inc VAT)
Standard
2
AED 17.90
Each (In a Tube of 2) (ex VAT)
AED 18.795
Each (In a Tube of 2) (inc VAT)
Standard
2
Ideate. Create. Collaborate
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Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
240 A, 397 A
Maximum Drain Source Voltage
40 V
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
7
Maximum Drain Source Resistance
1 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.9V
Minimum Gate Threshold Voltage
2.2V
Maximum Power Dissipation
294 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
10.67mm
Typical Gate Charge @ Vgs
210 nC @ 10 V
Width
9.65mm
Transistor Material
Si
Series
COOLiRFET
Minimum Operating Temperature
-55 °C
Height
4.83mm
Product details
COOLiRFET™ Power MOSFET, Infineon
Infineon's Automotive-qualified COOLiRFET™ Power MOSFETs achieve very low on-resistance (RDS(on)), very low conduction loss, resulting in highly efficient switching speeds of high current signals. They deliver higher efficiency, power density and reliability in harsh signal environments with robust avalanche performance, low conduction losses, fast switching speeds, and 175°C maximum junction temperature.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products