N-Channel MOSFET, 100 A, 40 V, 3-Pin IPAK Infineon AUIRFU8401
Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
40 V
Package Type
IPAK (TO-251)
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
4.2 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.9V
Minimum Gate Threshold Voltage
2.2V
Maximum Power Dissipation
79 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
6.73mm
Typical Gate Charge @ Vgs
42 nC @ 10 V
Width
2.39mm
Transistor Material
Si
Series
COOLiRFET
Minimum Operating Temperature
-55 °C
Height
6.22mm
Product details
COOLiRFET™ Power MOSFET, Infineon
Infineon's Automotive-qualified COOLiRFET™ Power MOSFETs achieve very low on-resistance (RDS(on)), very low conduction loss, resulting in highly efficient switching speeds of high current signals. They deliver higher efficiency, power density and reliability in harsh signal environments with robust avalanche performance, low conduction losses, fast switching speeds, and 175°C maximum junction temperature.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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AED 6.00
Each (Supplied in a Tube) (ex VAT)
AED 6.30
Each (Supplied in a Tube) (inc VAT)
Production pack (Tube)
5
AED 6.00
Each (Supplied in a Tube) (ex VAT)
AED 6.30
Each (Supplied in a Tube) (inc VAT)
Production pack (Tube)
5
Buy in bulk
| quantity | Unit price | Per Tube |
|---|---|---|
| 5 - 20 | AED 6.00 | AED 30.00 |
| 25 - 45 | AED 5.40 | AED 27.00 |
| 50 - 120 | AED 5.05 | AED 25.25 |
| 125 - 245 | AED 4.65 | AED 23.25 |
| 250+ | AED 4.30 | AED 21.50 |
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Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
40 V
Package Type
IPAK (TO-251)
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
4.2 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.9V
Minimum Gate Threshold Voltage
2.2V
Maximum Power Dissipation
79 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
6.73mm
Typical Gate Charge @ Vgs
42 nC @ 10 V
Width
2.39mm
Transistor Material
Si
Series
COOLiRFET
Minimum Operating Temperature
-55 °C
Height
6.22mm
Product details
COOLiRFET™ Power MOSFET, Infineon
Infineon's Automotive-qualified COOLiRFET™ Power MOSFETs achieve very low on-resistance (RDS(on)), very low conduction loss, resulting in highly efficient switching speeds of high current signals. They deliver higher efficiency, power density and reliability in harsh signal environments with robust avalanche performance, low conduction losses, fast switching speeds, and 175°C maximum junction temperature.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products