Infineon BFP840ESDH6327XTSA1 NPN Bipolar Transistor, 35 mA, 2.25 V, 4-Pin SOT-343
Technical Document
Specifications
Brand
InfineonTransistor Type
NPN
Maximum DC Collector Current
35 mA
Maximum Collector Emitter Voltage
2.25 V
Package Type
SOT-343
Mounting Type
Surface Mount
Maximum Power Dissipation
75 mW
Transistor Configuration
Single
Maximum Collector Base Voltage
2.9 V
Maximum Operating Frequency
80 GHz
Pin Count
4
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
2 x 1.25 x 0.8mm
Product details
SiGe RF Bipolar Transistors, Infineon
A range of ultra-low-noise wideband NPN bipolar RF transistors from Infineon. These hetero-junction bipolar devices utilize Infineon’s silicon germanium carbon (SiGe:C) material technology and are especially suited for use mobile applications in which low power consumption is a key requirement. With typical transition frequencies of up to 65 GHz these devices offer high power gain at frequencies of up to 10 GHz when used in amplifier applications. The transistors include internal circuitry for ESD and excessive RF input power protection.
Bipolar Transistors, Infineon
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AED 110.25
AED 2.205 Each (In a Pack of 50) (ex VAT)
AED 115.76
AED 2.315 Each (In a Pack of 50) (inc. VAT)
Standard
50
AED 110.25
AED 2.205 Each (In a Pack of 50) (ex VAT)
AED 115.76
AED 2.315 Each (In a Pack of 50) (inc. VAT)
Standard
50
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Please check again later.
| Quantity | Unit price | Per Pack |
|---|---|---|
| 50 - 950 | AED 2.205 | AED 110.25 |
| 1000 - 1950 | AED 1.26 | AED 63.00 |
| 2000 - 2950 | AED 1.208 | AED 60.38 |
| 3000 - 5950 | AED 1.208 | AED 60.38 |
| 6000+ | AED 1.155 | AED 57.75 |
Ideate. Create. Collaborate
JOIN FOR FREE
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Technical Document
Specifications
Brand
InfineonTransistor Type
NPN
Maximum DC Collector Current
35 mA
Maximum Collector Emitter Voltage
2.25 V
Package Type
SOT-343
Mounting Type
Surface Mount
Maximum Power Dissipation
75 mW
Transistor Configuration
Single
Maximum Collector Base Voltage
2.9 V
Maximum Operating Frequency
80 GHz
Pin Count
4
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
2 x 1.25 x 0.8mm
Product details
SiGe RF Bipolar Transistors, Infineon
A range of ultra-low-noise wideband NPN bipolar RF transistors from Infineon. These hetero-junction bipolar devices utilize Infineon’s silicon germanium carbon (SiGe:C) material technology and are especially suited for use mobile applications in which low power consumption is a key requirement. With typical transition frequencies of up to 65 GHz these devices offer high power gain at frequencies of up to 10 GHz when used in amplifier applications. The transistors include internal circuitry for ESD and excessive RF input power protection.
Bipolar Transistors, Infineon
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products