Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
100 V
Package Type
TDSON
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
5.6 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.8V
Minimum Gate Threshold Voltage
2.2V
Maximum Power Dissipation
139 W
Transistor Configuration
Single
Maximum Gate Source Voltage
20 V
Typical Gate Charge @ Vgs
58 nC @ 10 V
Width
6.35mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
5.49mm
Height
1.1mm
Series
BSC040N10NS5
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.1V
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AED 9.65
Each (In a Pack of 10) (ex VAT)
AED 10.132
Each (In a Pack of 10) (inc VAT)
10
AED 9.65
Each (In a Pack of 10) (ex VAT)
AED 10.132
Each (In a Pack of 10) (inc VAT)
10
Buy in bulk
quantity | Unit price | Per Pack |
---|---|---|
10 - 10 | AED 9.65 | AED 96.50 |
20 - 40 | AED 8.10 | AED 81.00 |
50 - 90 | AED 7.50 | AED 75.00 |
100 - 240 | AED 7.05 | AED 70.50 |
250+ | AED 6.45 | AED 64.50 |
Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
100 V
Package Type
TDSON
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
5.6 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.8V
Minimum Gate Threshold Voltage
2.2V
Maximum Power Dissipation
139 W
Transistor Configuration
Single
Maximum Gate Source Voltage
20 V
Typical Gate Charge @ Vgs
58 nC @ 10 V
Width
6.35mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
5.49mm
Height
1.1mm
Series
BSC040N10NS5
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.1V