N-Channel MOSFET, 71 A, 100 V, 8-Pin TDSON Infineon BSC123N10LSGATMA1

RS Stock No.: 754-5305PBrand: InfineonManufacturers Part No.: BSC123N10LSGATMA1
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Technical Document

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

71 A

Maximum Drain Source Voltage

100 V

Package Type

TDSON

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

16.6 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.4V

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

114 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

51 nC @ 10 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

5.35mm

Width

6.1mm

Transistor Material

Si

Series

OptiMOS 2

Minimum Operating Temperature

-55 °C

Height

1.1mm

Product details

Infineon OptiMOS™2 Power MOSFET Family

Infineon’s OptiMOS™2 N-Channel family offers the industry's lowest on-state resistance inside their voltage group. The Power MOSFET series can be used in many applications including high frequency Telecom, Datacom, solar, low voltage drives and Server Power Supplies. The OptiMOS 2 product family ranges from 20V and over and offers a selection of different package types.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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AED 6.70

Each (Supplied on a Reel) (ex VAT)

AED 7.035

Each (Supplied on a Reel) (inc. VAT)

N-Channel MOSFET, 71 A, 100 V, 8-Pin TDSON Infineon BSC123N10LSGATMA1
Select packaging type

Production pack (Reel)

Select packaging type

Standard - each

Available in multiples of 2.

Production -

Available in multiples of 2.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

2

Available in multiples of 2
2AED 13.40
4AED 26.80
6AED 40.20
8AED 53.60
10AED 67.00
12AED 80.40
14AED 93.80
16AED 107.20
18AED 120.60
20AED 129.00
22AED 141.90
24AED 154.80
26AED 167.70
28AED 180.60
30AED 193.50

AED 6.70

Each (Supplied on a Reel) (ex VAT)

AED 7.035

Each (Supplied on a Reel) (inc. VAT)

N-Channel MOSFET, 71 A, 100 V, 8-Pin TDSON Infineon BSC123N10LSGATMA1
Stock information temporarily unavailable.
Select packaging type

Production pack (Reel)

Select packaging type

Standard - each

Available in multiples of 2.

Production -

Available in multiples of 2.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

2

Available in multiples of 2
2AED 13.40
4AED 26.80
6AED 40.20
8AED 53.60
10AED 67.00
12AED 80.40
14AED 93.80
16AED 107.20
18AED 120.60
20AED 129.00
22AED 141.90
24AED 154.80
26AED 167.70
28AED 180.60
30AED 193.50

Buy in bulk

quantityUnit pricePer Reel
2 - 18AED 6.70AED 13.40
20 - 38AED 6.45AED 12.90
40 - 98AED 6.20AED 12.40
100 - 298AED 6.05AED 12.10
300+AED 5.90AED 11.80

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

71 A

Maximum Drain Source Voltage

100 V

Package Type

TDSON

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

16.6 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.4V

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

114 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

51 nC @ 10 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

5.35mm

Width

6.1mm

Transistor Material

Si

Series

OptiMOS 2

Minimum Operating Temperature

-55 °C

Height

1.1mm

Product details

Infineon OptiMOS™2 Power MOSFET Family

Infineon’s OptiMOS™2 N-Channel family offers the industry's lowest on-state resistance inside their voltage group. The Power MOSFET series can be used in many applications including high frequency Telecom, Datacom, solar, low voltage drives and Server Power Supplies. The OptiMOS 2 product family ranges from 20V and over and offers a selection of different package types.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more