Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
80 A
Maximum Drain Source Voltage
49 V
Package Type
TO-220-7
Mounting Type
Through Hole
Pin Count
7
Maximum Drain Source Resistance
9.5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
300 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
10mm
Typical Gate Charge @ Vgs
155 nC @ 10 V
Width
4.4mm
Transistor Material
Si
Series
TEMPFET
Minimum Operating Temperature
-40 °C
Forward Diode Voltage
1.4V
Height
15.65mm
Product details
Infineon TEMPFET™ MOSFET with Thermal Switch
The Infineon TEMPFET™ is a logic level N-channel power MOSFET with an integrated on-chip thermal sensor which will operate when the chip temperature exceeds 160°C. The anode and cathode of the temperature sensing thyristor accessible and isolated from the power MOSFET.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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AED 31.85
Each (Supplied in a Tube) (ex VAT)
AED 33.442
Each (Supplied in a Tube) (inc. VAT)
Production pack (Tube)
4
AED 31.85
Each (Supplied in a Tube) (ex VAT)
AED 33.442
Each (Supplied in a Tube) (inc. VAT)
Production pack (Tube)
4
Buy in bulk
quantity | Unit price | Per Tube |
---|---|---|
4 - 4 | AED 31.85 | AED 127.40 |
8 - 16 | AED 30.25 | AED 121.00 |
20+ | AED 27.20 | AED 108.80 |
Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
80 A
Maximum Drain Source Voltage
49 V
Package Type
TO-220-7
Mounting Type
Through Hole
Pin Count
7
Maximum Drain Source Resistance
9.5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
300 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
10mm
Typical Gate Charge @ Vgs
155 nC @ 10 V
Width
4.4mm
Transistor Material
Si
Series
TEMPFET
Minimum Operating Temperature
-40 °C
Forward Diode Voltage
1.4V
Height
15.65mm
Product details
Infineon TEMPFET™ MOSFET with Thermal Switch
The Infineon TEMPFET™ is a logic level N-channel power MOSFET with an integrated on-chip thermal sensor which will operate when the chip temperature exceeds 160°C. The anode and cathode of the temperature sensing thyristor accessible and isolated from the power MOSFET.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.