Infineon 2Mbit SPI FRAM Memory 8-Pin DFN, FM25V20A-DG
Technical Document
Specifications
Brand
InfineonMemory Size
2Mbit
Organisation
256K x 8 bit
Interface Type
SPI
Data Bus Width
8bit
Maximum Random Access Time
16ns
Mounting Type
Surface Mount
Package Type
DFN
Pin Count
8
Dimensions
5 x 6 x 0.7mm
Length
6mm
Maximum Operating Supply Voltage
3.6 V
Width
5mm
Height
0.7mm
Maximum Operating Temperature
+85 °C
Number of Bits per Word
8bit
Number of Words
256K
Minimum Operating Temperature
-40 °C
Minimum Operating Supply Voltage
2 V
Product details
F-RAM, Cypress Semiconductor
Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.
Nonvolatile Ferroelectric RAM Memory
Fast write speed
High endurance
Low power consumption
FRAM (Ferroelectric RAM)
FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.
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AED 80.60
AED 80.60 Each (ex VAT)
AED 84.63
AED 84.63 Each (inc. VAT)
Standard
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AED 80.60
AED 80.60 Each (ex VAT)
AED 84.63
AED 84.63 Each (inc. VAT)
Standard
1
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| quantity | Unit price |
|---|---|
| 1 - 9 | AED 80.60 |
| 10 - 24 | AED 66.55 |
| 25 - 99 | AED 64.80 |
| 100 - 499 | AED 64.05 |
| 500+ | AED 63.45 |
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Technical Document
Specifications
Brand
InfineonMemory Size
2Mbit
Organisation
256K x 8 bit
Interface Type
SPI
Data Bus Width
8bit
Maximum Random Access Time
16ns
Mounting Type
Surface Mount
Package Type
DFN
Pin Count
8
Dimensions
5 x 6 x 0.7mm
Length
6mm
Maximum Operating Supply Voltage
3.6 V
Width
5mm
Height
0.7mm
Maximum Operating Temperature
+85 °C
Number of Bits per Word
8bit
Number of Words
256K
Minimum Operating Temperature
-40 °C
Minimum Operating Supply Voltage
2 V
Product details
F-RAM, Cypress Semiconductor
Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.
Nonvolatile Ferroelectric RAM Memory
Fast write speed
High endurance
Low power consumption
FRAM (Ferroelectric RAM)
FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products