Infineon IKY75N120CH3XKSA1, P-Channel IGBT, 150 A 1200 V, 4-Pin TO-247, Through Hole

RS Stock No.: 162-3318Brand: InfineonManufacturers Part No.: IKY75N120CH3XKSA1
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Technical Document

Specifications

Maximum Continuous Collector Current

150 A

Maximum Collector Emitter Voltage

1200 V

Maximum Gate Emitter Voltage

±30V

Number of Transistors

1

Maximum Power Dissipation

938 W

Package Type

TO-247

Mounting Type

Through Hole

Channel Type

P

Pin Count

4

Switching Speed

60kHz

Transistor Configuration

Single

Dimensions

15.9 x 5.1 x 22.5mm

Maximum Operating Temperature

+175 °C

Energy Rating

6.3mJ

Gate Capacitance

4856pF

Minimum Operating Temperature

-40 °C

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AED 70.20

Each (ex VAT)

AED 73.71

Each (inc VAT)

Infineon IKY75N120CH3XKSA1, P-Channel IGBT, 150 A 1200 V, 4-Pin TO-247, Through Hole
Select packaging type

AED 70.20

Each (ex VAT)

AED 73.71

Each (inc VAT)

Infineon IKY75N120CH3XKSA1, P-Channel IGBT, 150 A 1200 V, 4-Pin TO-247, Through Hole
Stock information temporarily unavailable.
Select packaging type

Buy in bulk

quantityUnit price
1 - 9AED 70.20
10 - 19AED 66.60
20+AED 63.45

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Technical Document

Specifications

Maximum Continuous Collector Current

150 A

Maximum Collector Emitter Voltage

1200 V

Maximum Gate Emitter Voltage

±30V

Number of Transistors

1

Maximum Power Dissipation

938 W

Package Type

TO-247

Mounting Type

Through Hole

Channel Type

P

Pin Count

4

Switching Speed

60kHz

Transistor Configuration

Single

Dimensions

15.9 x 5.1 x 22.5mm

Maximum Operating Temperature

+175 °C

Energy Rating

6.3mJ

Gate Capacitance

4856pF

Minimum Operating Temperature

-40 °C