Infineon IKZ50N65ES5XKSA1, P-Channel IGBT, 80 A 650 V, 4-Pin TO-247, Through Hole

RS Stock No.: 162-3332Brand: InfineonManufacturers Part No.: IKZ50N65ES5XKSA1
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Technical Document

Specifications

Brand

Infineon

Maximum Continuous Collector Current

80 A

Maximum Collector Emitter Voltage

650 V

Maximum Gate Emitter Voltage

±30V

Maximum Power Dissipation

274 W

Number of Transistors

1

Package Type

TO-247

Mounting Type

Through Hole

Channel Type

P

Pin Count

4

Switching Speed

40kHz

Transistor Configuration

Single

Dimensions

15.9 x 5.1 x 22.5mm

Minimum Operating Temperature

-40 °C

Gate Capacitance

3100pF

Maximum Operating Temperature

+175 °C

Energy Rating

1.65mJ

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AED 19.35

Each (ex VAT)

AED 20.32

Each (inc VAT)

Infineon IKZ50N65ES5XKSA1, P-Channel IGBT, 80 A 650 V, 4-Pin TO-247, Through Hole
Select packaging type

Select packaging type

Standard - each

Available in multiples of 1.

Production -

Available in multiples of 1.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

1

Available in multiples of 1
1AED 19.35
2AED 38.70
3AED 58.05
4AED 77.40
5AED 96.75
6AED 116.10
7AED 135.45
8AED 154.80
9AED 174.15
10AED 193.50
11AED 212.85
12AED 232.20
13AED 251.55
14AED 270.90
15AED 290.25

AED 19.35

Each (ex VAT)

AED 20.32

Each (inc VAT)

Infineon IKZ50N65ES5XKSA1, P-Channel IGBT, 80 A 650 V, 4-Pin TO-247, Through Hole
Stock information temporarily unavailable.
Select packaging type

Select packaging type

Standard - each

Available in multiples of 1.

Production -

Available in multiples of 1.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

1

Available in multiples of 1
1AED 19.35
2AED 38.70
3AED 58.05
4AED 77.40
5AED 96.75
6AED 116.10
7AED 135.45
8AED 154.80
9AED 174.15
10AED 193.50
11AED 212.85
12AED 232.20
13AED 251.55
14AED 270.90
15AED 290.25

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

Infineon

Maximum Continuous Collector Current

80 A

Maximum Collector Emitter Voltage

650 V

Maximum Gate Emitter Voltage

±30V

Maximum Power Dissipation

274 W

Number of Transistors

1

Package Type

TO-247

Mounting Type

Through Hole

Channel Type

P

Pin Count

4

Switching Speed

40kHz

Transistor Configuration

Single

Dimensions

15.9 x 5.1 x 22.5mm

Minimum Operating Temperature

-40 °C

Gate Capacitance

3100pF

Maximum Operating Temperature

+175 °C

Energy Rating

1.65mJ

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more