Infineon CoolSiC MOSFET 650 V G1 SiC N-Channel MOSFET, 79 A, 650 V, 8-Pin PG-HSOF-8 IMT65R022M1HXUMA1

RS Stock No.: 284-713Brand: InfineonManufacturers Part No.: IMT65R022M1HXUMA1
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Technical Document

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

79 A

Maximum Drain Source Voltage

650 V

Series

CoolSiC MOSFET 650 V G1

Package Type

PG-HSOF-8

Mounting Type

Surface Mount

Pin Count

8

Channel Mode

Enhancement

Number of Elements per Chip

1

Transistor Material

SiC

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Stock information temporarily unavailable.

AED 153,405.00

AED 76.702 Each (On a Reel of 2000) (ex VAT)

AED 161,075.25

AED 80.537 Each (On a Reel of 2000) (inc. VAT)

Infineon CoolSiC MOSFET 650 V G1 SiC N-Channel MOSFET, 79 A, 650 V, 8-Pin PG-HSOF-8 IMT65R022M1HXUMA1

2000

Available in multiples of 2000
2000AED 153,405.00
4000AED 306,810.00
6000AED 460,215.00
8000AED 613,620.00
10000AED 767,025.00
12000AED 920,430.00
14000AED 1,073,835.00
16000AED 1,227,240.00
18000AED 1,380,645.00
20000AED 1,534,050.00
22000AED 1,687,455.00
24000AED 1,840,860.00
26000AED 1,994,265.00
28000AED 2,147,670.00
30000AED 2,301,075.00

AED 153,405.00

AED 76.702 Each (On a Reel of 2000) (ex VAT)

AED 161,075.25

AED 80.537 Each (On a Reel of 2000) (inc. VAT)

Infineon CoolSiC MOSFET 650 V G1 SiC N-Channel MOSFET, 79 A, 650 V, 8-Pin PG-HSOF-8 IMT65R022M1HXUMA1
Stock information temporarily unavailable.

2000

Available in multiples of 2000
2000AED 153,405.00
4000AED 306,810.00
6000AED 460,215.00
8000AED 613,620.00
10000AED 767,025.00
12000AED 920,430.00
14000AED 1,073,835.00
16000AED 1,227,240.00
18000AED 1,380,645.00
20000AED 1,534,050.00
22000AED 1,687,455.00
24000AED 1,840,860.00
26000AED 1,994,265.00
28000AED 2,147,670.00
30000AED 2,301,075.00

Stock information temporarily unavailable.

Please check again later.

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

79 A

Maximum Drain Source Voltage

650 V

Series

CoolSiC MOSFET 650 V G1

Package Type

PG-HSOF-8

Mounting Type

Surface Mount

Pin Count

8

Channel Mode

Enhancement

Number of Elements per Chip

1

Transistor Material

SiC

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more