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Infineon SiC N-Channel MOSFET, 79 A, 650 V, 8-Pin PG-HSOF-8 IMT65R022M1HXUMA1

RS Stock No.: 284-713Brand: InfineonManufacturers Part No.: IMT65R022M1HXUMA1
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Technical Document

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

79 A

Maximum Drain Source Voltage

650 V

Series

CoolSiC MOSFET 650 V G1

Package Type

PG-HSOF-8

Mounting Type

Surface Mount

Pin Count

8

Channel Mode

Enhancement

Number of Elements per Chip

1

Transistor Material

SiC

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Stock information temporarily unavailable.

AED 148,995.00

AED 74.498 Each (On a Reel of 2000) (ex VAT)

AED 156,444.75

AED 78.223 Each (On a Reel of 2000) (inc. VAT)

Infineon SiC N-Channel MOSFET, 79 A, 650 V, 8-Pin PG-HSOF-8 IMT65R022M1HXUMA1

2000

Available in multiples of 2000
2000AED 148,995.00
4000AED 297,990.00
6000AED 446,985.00
8000AED 595,980.00
10000AED 744,975.00
12000AED 893,970.00
14000AED 1,042,965.00
16000AED 1,191,960.00
18000AED 1,340,955.00
20000AED 1,489,950.00
22000AED 1,638,945.00
24000AED 1,787,940.00
26000AED 1,936,935.00
28000AED 2,085,930.00
30000AED 2,234,925.00

AED 148,995.00

AED 74.498 Each (On a Reel of 2000) (ex VAT)

AED 156,444.75

AED 78.223 Each (On a Reel of 2000) (inc. VAT)

Infineon SiC N-Channel MOSFET, 79 A, 650 V, 8-Pin PG-HSOF-8 IMT65R022M1HXUMA1
Stock information temporarily unavailable.

2000

Available in multiples of 2000
2000AED 148,995.00
4000AED 297,990.00
6000AED 446,985.00
8000AED 595,980.00
10000AED 744,975.00
12000AED 893,970.00
14000AED 1,042,965.00
16000AED 1,191,960.00
18000AED 1,340,955.00
20000AED 1,489,950.00
22000AED 1,638,945.00
24000AED 1,787,940.00
26000AED 1,936,935.00
28000AED 2,085,930.00
30000AED 2,234,925.00

Stock information temporarily unavailable.

Please check again later.

Ideate. Create. Collaborate

JOIN FOR FREE

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design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

79 A

Maximum Drain Source Voltage

650 V

Series

CoolSiC MOSFET 650 V G1

Package Type

PG-HSOF-8

Mounting Type

Surface Mount

Pin Count

8

Channel Mode

Enhancement

Number of Elements per Chip

1

Transistor Material

SiC

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more