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Infineon SiC N-Channel MOSFET, 79 A, 650 V, 8-Pin PG-HSOF-8 IMT65R022M1HXUMA1

RS Stock No.: 284-714Brand: InfineonManufacturers Part No.: IMT65R022M1HXUMA1
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Technical Document

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

79 A

Maximum Drain Source Voltage

650 V

Series

CoolSiC MOSFET 650 V G1

Package Type

PG-HSOF-8

Mounting Type

Surface Mount

Pin Count

8

Channel Mode

Enhancement

Number of Elements per Chip

1

Transistor Material

SiC

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Stock information temporarily unavailable.

AED 103.22

AED 103.22 Each (ex VAT)

AED 108.38

AED 108.38 Each (inc. VAT)

Infineon SiC N-Channel MOSFET, 79 A, 650 V, 8-Pin PG-HSOF-8 IMT65R022M1HXUMA1
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 1.

Production -

Available in multiples of 1.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

1

Available in multiples of 1
1AED 103.22
2AED 206.43
3AED 309.64
4AED 412.86
5AED 516.08
6AED 619.29
7AED 722.50
8AED 825.72
9AED 928.94
10AED 928.72
11AED 1,021.60
12AED 1,114.47
13AED 1,207.34
14AED 1,300.22
15AED 1,393.09

AED 103.22

AED 103.22 Each (ex VAT)

AED 108.38

AED 108.38 Each (inc. VAT)

Infineon SiC N-Channel MOSFET, 79 A, 650 V, 8-Pin PG-HSOF-8 IMT65R022M1HXUMA1
Stock information temporarily unavailable.
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 1.

Production -

Available in multiples of 1.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

1

Available in multiples of 1
1AED 103.22
2AED 206.43
3AED 309.64
4AED 412.86
5AED 516.08
6AED 619.29
7AED 722.50
8AED 825.72
9AED 928.94
10AED 928.72
11AED 1,021.60
12AED 1,114.47
13AED 1,207.34
14AED 1,300.22
15AED 1,393.09

Stock information temporarily unavailable.

Please check again later.

quantityUnit price
1 - 9AED 103.22
10 - 99AED 92.87
100+AED 85.68

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

79 A

Maximum Drain Source Voltage

650 V

Series

CoolSiC MOSFET 650 V G1

Package Type

PG-HSOF-8

Mounting Type

Surface Mount

Pin Count

8

Channel Mode

Enhancement

Number of Elements per Chip

1

Transistor Material

SiC

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more