Infineon CoolSiC MOSFET 650 V G1 SiC N-Channel MOSFET, 71 A, 650 V, 8-Pin PG-HSOF-8 IMT65R030M1HXUMA1

RS Stock No.: 284-717Brand: InfineonManufacturers Part No.: IMT65R030M1HXUMA1
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Technical Document

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

71 A

Maximum Drain Source Voltage

650 V

Package Type

PG-HSOF-8

Series

CoolSiC MOSFET 650 V G1

Mounting Type

Surface Mount

Pin Count

8

Channel Mode

Enhancement

Transistor Material

SiC

Number of Elements per Chip

1

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Stock information temporarily unavailable.

AED 80.32

AED 80.32 Each (ex VAT)

AED 84.34

AED 84.34 Each (inc. VAT)

Infineon CoolSiC MOSFET 650 V G1 SiC N-Channel MOSFET, 71 A, 650 V, 8-Pin PG-HSOF-8 IMT65R030M1HXUMA1
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 1.

Production -

Available in multiples of 1.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

1

Available in multiples of 1
1AED 80.32
2AED 160.65
3AED 240.98
4AED 321.30
5AED 401.62
6AED 481.95
7AED 562.28
8AED 642.60
9AED 722.92
10AED 723.45
11AED 795.80
12AED 868.14
13AED 940.48
14AED 1,012.83
15AED 1,085.18

AED 80.32

AED 80.32 Each (ex VAT)

AED 84.34

AED 84.34 Each (inc. VAT)

Infineon CoolSiC MOSFET 650 V G1 SiC N-Channel MOSFET, 71 A, 650 V, 8-Pin PG-HSOF-8 IMT65R030M1HXUMA1
Stock information temporarily unavailable.
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 1.

Production -

Available in multiples of 1.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

1

Available in multiples of 1
1AED 80.32
2AED 160.65
3AED 240.98
4AED 321.30
5AED 401.62
6AED 481.95
7AED 562.28
8AED 642.60
9AED 722.92
10AED 723.45
11AED 795.80
12AED 868.14
13AED 940.48
14AED 1,012.83
15AED 1,085.18

Stock information temporarily unavailable.

Please check again later.

QuantityUnit price
1 - 9AED 80.32
10 - 99AED 72.34
100+AED 66.83

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
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Technical Document

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

71 A

Maximum Drain Source Voltage

650 V

Package Type

PG-HSOF-8

Series

CoolSiC MOSFET 650 V G1

Mounting Type

Surface Mount

Pin Count

8

Channel Mode

Enhancement

Transistor Material

SiC

Number of Elements per Chip

1

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more