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Infineon CoolSiC MOSFET 650 V G1 SiC N-Channel MOSFET, 61 A, 650 V, 8-Pin PG-HSOF-8 IMT65R039M1HXUMA1

RS Stock No.: 284-720Brand: InfineonManufacturers Part No.: IMT65R039M1HXUMA1
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Technical Document

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

61 A

Maximum Drain Source Voltage

650 V

Series

CoolSiC MOSFET 650 V G1

Package Type

PG-HSOF-8

Mounting Type

Surface Mount

Pin Count

8

Channel Mode

Enhancement

Number of Elements per Chip

1

Transistor Material

SiC

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Stock information temporarily unavailable.

AED 63.16

AED 63.16 Each (ex VAT)

AED 66.32

AED 66.32 Each (inc. VAT)

Infineon CoolSiC MOSFET 650 V G1 SiC N-Channel MOSFET, 61 A, 650 V, 8-Pin PG-HSOF-8 IMT65R039M1HXUMA1
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 1.

Production -

Available in multiples of 1.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

1

Available in multiples of 1
1AED 63.16
2AED 126.32
3AED 189.47
4AED 252.63
5AED 315.79
6AED 378.94
7AED 442.10
8AED 505.26
9AED 568.42
10AED 568.58
11AED 625.43
12AED 682.29
13AED 739.15
14AED 796.00
15AED 852.86

AED 63.16

AED 63.16 Each (ex VAT)

AED 66.32

AED 66.32 Each (inc. VAT)

Infineon CoolSiC MOSFET 650 V G1 SiC N-Channel MOSFET, 61 A, 650 V, 8-Pin PG-HSOF-8 IMT65R039M1HXUMA1
Stock information temporarily unavailable.
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 1.

Production -

Available in multiples of 1.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

1

Available in multiples of 1
1AED 63.16
2AED 126.32
3AED 189.47
4AED 252.63
5AED 315.79
6AED 378.94
7AED 442.10
8AED 505.26
9AED 568.42
10AED 568.58
11AED 625.43
12AED 682.29
13AED 739.15
14AED 796.00
15AED 852.86

Stock information temporarily unavailable.

Please check again later.

quantityUnit price
1 - 9AED 63.16
10 - 99AED 56.86
100+AED 53.29

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  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

61 A

Maximum Drain Source Voltage

650 V

Series

CoolSiC MOSFET 650 V G1

Package Type

PG-HSOF-8

Mounting Type

Surface Mount

Pin Count

8

Channel Mode

Enhancement

Number of Elements per Chip

1

Transistor Material

SiC

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more