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Infineon CoolSiC MOSFET 650 V G1 SiC N-Channel MOSFET, 50 A, 650 V, 8-Pin PG-HSOF-8 IMT65R048M1HXUMA1

RS Stock No.: 284-723Brand: InfineonManufacturers Part No.: IMT65R048M1HXUMA1
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Technical Document

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

50 A

Maximum Drain Source Voltage

650 V

Series

CoolSiC MOSFET 650 V G1

Package Type

PG-HSOF-8

Mounting Type

Surface Mount

Pin Count

8

Channel Mode

Enhancement

Number of Elements per Chip

1

Transistor Material

SiC

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Stock information temporarily unavailable.

AED 55.65

AED 55.65 Each (ex VAT)

AED 58.43

AED 58.43 Each (inc. VAT)

Infineon CoolSiC MOSFET 650 V G1 SiC N-Channel MOSFET, 50 A, 650 V, 8-Pin PG-HSOF-8 IMT65R048M1HXUMA1
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 1.

Production -

Available in multiples of 1.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

1

Available in multiples of 1
1AED 55.65
2AED 111.30
3AED 166.95
4AED 222.60
5AED 278.25
6AED 333.90
7AED 389.55
8AED 445.20
9AED 500.85
10AED 503.48
11AED 553.82
12AED 604.17
13AED 654.52
14AED 704.86
15AED 755.21

AED 55.65

AED 55.65 Each (ex VAT)

AED 58.43

AED 58.43 Each (inc. VAT)

Infineon CoolSiC MOSFET 650 V G1 SiC N-Channel MOSFET, 50 A, 650 V, 8-Pin PG-HSOF-8 IMT65R048M1HXUMA1
Stock information temporarily unavailable.
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 1.

Production -

Available in multiples of 1.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

1

Available in multiples of 1
1AED 55.65
2AED 111.30
3AED 166.95
4AED 222.60
5AED 278.25
6AED 333.90
7AED 389.55
8AED 445.20
9AED 500.85
10AED 503.48
11AED 553.82
12AED 604.17
13AED 654.52
14AED 704.86
15AED 755.21

Stock information temporarily unavailable.

Please check again later.

quantityUnit price
1 - 9AED 55.65
10 - 99AED 50.35
100+AED 47.36

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

50 A

Maximum Drain Source Voltage

650 V

Series

CoolSiC MOSFET 650 V G1

Package Type

PG-HSOF-8

Mounting Type

Surface Mount

Pin Count

8

Channel Mode

Enhancement

Number of Elements per Chip

1

Transistor Material

SiC

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more