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Infineon CoolSiC MOSFET 650 V G1 SiC N-Channel MOSFET, 44 A, 650 V, 8-Pin PG-HSOF-8 IMT65R057M1HXUMA1

RS Stock No.: 284-724Brand: InfineonManufacturers Part No.: IMT65R057M1HXUMA1
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Technical Document

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

44 A

Maximum Drain Source Voltage

650 V

Series

CoolSiC MOSFET 650 V G1

Package Type

PG-HSOF-8

Mounting Type

Surface Mount

Pin Count

8

Channel Mode

Enhancement

Number of Elements per Chip

1

Transistor Material

SiC

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Stock information temporarily unavailable.

AED 68,985.00

AED 34.492 1 Reel of 1 (ex VAT)

AED 72,434.25

AED 36.217 1 Reel of 1 (inc. VAT)

Infineon CoolSiC MOSFET 650 V G1 SiC N-Channel MOSFET, 44 A, 650 V, 8-Pin PG-HSOF-8 IMT65R057M1HXUMA1

2000

Available in multiples of 2000
2000AED 68,985.00
4000AED 137,970.00
6000AED 206,955.00
8000AED 275,940.00
10000AED 344,925.00
12000AED 413,910.00
14000AED 482,895.00
16000AED 551,880.00
18000AED 620,865.00
20000AED 689,850.00
22000AED 758,835.00
24000AED 827,820.00
26000AED 896,805.00
28000AED 965,790.00
30000AED 1,034,775.00

AED 68,985.00

AED 34.492 1 Reel of 1 (ex VAT)

AED 72,434.25

AED 36.217 1 Reel of 1 (inc. VAT)

Infineon CoolSiC MOSFET 650 V G1 SiC N-Channel MOSFET, 44 A, 650 V, 8-Pin PG-HSOF-8 IMT65R057M1HXUMA1
Stock information temporarily unavailable.

2000

Available in multiples of 2000
2000AED 68,985.00
4000AED 137,970.00
6000AED 206,955.00
8000AED 275,940.00
10000AED 344,925.00
12000AED 413,910.00
14000AED 482,895.00
16000AED 551,880.00
18000AED 620,865.00
20000AED 689,850.00
22000AED 758,835.00
24000AED 827,820.00
26000AED 896,805.00
28000AED 965,790.00
30000AED 1,034,775.00

Stock information temporarily unavailable.

Please check again later.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

44 A

Maximum Drain Source Voltage

650 V

Series

CoolSiC MOSFET 650 V G1

Package Type

PG-HSOF-8

Mounting Type

Surface Mount

Pin Count

8

Channel Mode

Enhancement

Number of Elements per Chip

1

Transistor Material

SiC

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more