Infineon CoolSiC MOSFET 650 V G1 SiC N-Channel MOSFET, 44 A, 650 V, 8-Pin PG-HSOF-8 IMT65R057M1HXUMA1

RS Stock No.: 284-726Brand: InfineonManufacturers Part No.: IMT65R057M1HXUMA1
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Technical Document

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

44 A

Maximum Drain Source Voltage

650 V

Package Type

PG-HSOF-8

Series

CoolSiC MOSFET 650 V G1

Mounting Type

Surface Mount

Pin Count

8

Channel Mode

Enhancement

Number of Elements per Chip

1

Transistor Material

SiC

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Stock information temporarily unavailable.

AED 54.08

AED 54.08 Each (ex VAT)

AED 56.78

AED 56.78 Each (inc. VAT)

Infineon CoolSiC MOSFET 650 V G1 SiC N-Channel MOSFET, 44 A, 650 V, 8-Pin PG-HSOF-8 IMT65R057M1HXUMA1
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 1.

Production -

Available in multiples of 1.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

1

Available in multiples of 1
1AED 54.08
2AED 108.15
3AED 162.22
4AED 216.30
5AED 270.38
6AED 324.45
7AED 378.52
8AED 432.60
9AED 486.68
10AED 489.82
11AED 538.81
12AED 587.79
13AED 636.77
14AED 685.76
15AED 734.74

AED 54.08

AED 54.08 Each (ex VAT)

AED 56.78

AED 56.78 Each (inc. VAT)

Infineon CoolSiC MOSFET 650 V G1 SiC N-Channel MOSFET, 44 A, 650 V, 8-Pin PG-HSOF-8 IMT65R057M1HXUMA1
Stock information temporarily unavailable.
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 1.

Production -

Available in multiples of 1.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

1

Available in multiples of 1
1AED 54.08
2AED 108.15
3AED 162.22
4AED 216.30
5AED 270.38
6AED 324.45
7AED 378.52
8AED 432.60
9AED 486.68
10AED 489.82
11AED 538.81
12AED 587.79
13AED 636.77
14AED 685.76
15AED 734.74

Stock information temporarily unavailable.

Please check again later.

QuantityUnit price
1 - 9AED 54.08
10 - 99AED 48.98
100 - 499AED 46.10
500 - 999AED 43.58
1000+AED 39.95

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Technical Document

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

44 A

Maximum Drain Source Voltage

650 V

Package Type

PG-HSOF-8

Series

CoolSiC MOSFET 650 V G1

Mounting Type

Surface Mount

Pin Count

8

Channel Mode

Enhancement

Number of Elements per Chip

1

Transistor Material

SiC

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more