Infineon CoolSiC MOSFET 650 V G1 SiC N-Channel MOSFET, 32 A, 650 V, 8-Pin PG-HSOF-8 IMT65R083M1HXUMA1

RS Stock No.: 284-732Brand: InfineonManufacturers Part No.: IMT65R083M1HXUMA1
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Technical Document

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

32 A

Maximum Drain Source Voltage

650 V

Series

CoolSiC MOSFET 650 V G1

Package Type

PG-HSOF-8

Mounting Type

Surface Mount

Pin Count

8

Channel Mode

Enhancement

Number of Elements per Chip

1

Transistor Material

SiC

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Stock information temporarily unavailable.

AED 42.16

AED 42.16 Each (ex VAT)

AED 44.27

AED 44.27 Each (inc. VAT)

Infineon CoolSiC MOSFET 650 V G1 SiC N-Channel MOSFET, 32 A, 650 V, 8-Pin PG-HSOF-8 IMT65R083M1HXUMA1
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 1.

Production -

Available in multiples of 1.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

1

Available in multiples of 1
1AED 42.16
2AED 84.32
3AED 126.47
4AED 168.63
5AED 210.79
6AED 252.94
7AED 295.10
8AED 337.26
9AED 379.42
10AED 388.50
11AED 427.35
12AED 466.20
13AED 505.05
14AED 543.90
15AED 582.75

AED 42.16

AED 42.16 Each (ex VAT)

AED 44.27

AED 44.27 Each (inc. VAT)

Infineon CoolSiC MOSFET 650 V G1 SiC N-Channel MOSFET, 32 A, 650 V, 8-Pin PG-HSOF-8 IMT65R083M1HXUMA1
Stock information temporarily unavailable.
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 1.

Production -

Available in multiples of 1.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

1

Available in multiples of 1
1AED 42.16
2AED 84.32
3AED 126.47
4AED 168.63
5AED 210.79
6AED 252.94
7AED 295.10
8AED 337.26
9AED 379.42
10AED 388.50
11AED 427.35
12AED 466.20
13AED 505.05
14AED 543.90
15AED 582.75

Stock information temporarily unavailable.

Please check again later.

QuantityUnit price
1 - 9AED 42.16
10 - 99AED 38.85
100 - 499AED 36.59
500 - 999AED 34.70
1000+AED 31.82

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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Click here to find out more

Technical Document

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

32 A

Maximum Drain Source Voltage

650 V

Series

CoolSiC MOSFET 650 V G1

Package Type

PG-HSOF-8

Mounting Type

Surface Mount

Pin Count

8

Channel Mode

Enhancement

Number of Elements per Chip

1

Transistor Material

SiC

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more