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Infineon CoolSiC Silicon N-Channel MOSFET, 39 A, 650 V, 3-Pin TO-247 IMW65R048M1HXKSA1

RS Stock No.: 232-0389Brand: InfineonManufacturers Part No.: IMW65R048M1HXKSA1
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Technical Document

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

39 A

Maximum Drain Source Voltage

650 V

Series

CoolSiC

Package Type

TO-247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

0.064 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5.7V

Number of Elements per Chip

1

Transistor Material

Silicon

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Stock information temporarily unavailable.

AED 859.95

AED 28.665 Each (In a Tube of 30) (ex VAT)

AED 902.95

AED 30.098 Each (In a Tube of 30) (inc. VAT)

Infineon CoolSiC Silicon N-Channel MOSFET, 39 A, 650 V, 3-Pin TO-247 IMW65R048M1HXKSA1

30

Available in multiples of 30
30AED 859.95
60AED 1,634.85
90AED 2,296.35
120AED 3,061.80
150AED 3,827.25
180AED 4,592.70
210AED 5,358.15
240AED 6,123.60
270AED 6,889.05
300AED 7,654.50
330AED 8,419.95
360AED 9,185.40
390AED 9,950.85
420AED 10,716.30
450AED 11,481.75

AED 859.95

AED 28.665 Each (In a Tube of 30) (ex VAT)

AED 902.95

AED 30.098 Each (In a Tube of 30) (inc. VAT)

Infineon CoolSiC Silicon N-Channel MOSFET, 39 A, 650 V, 3-Pin TO-247 IMW65R048M1HXKSA1
Stock information temporarily unavailable.

30

Available in multiples of 30
30AED 859.95
60AED 1,634.85
90AED 2,296.35
120AED 3,061.80
150AED 3,827.25
180AED 4,592.70
210AED 5,358.15
240AED 6,123.60
270AED 6,889.05
300AED 7,654.50
330AED 8,419.95
360AED 9,185.40
390AED 9,950.85
420AED 10,716.30
450AED 11,481.75

Stock information temporarily unavailable.

Please check again later.

quantityUnit pricePer Tube
30 - 30AED 28.665AED 859.95
60 - 60AED 27.248AED 817.42
90+AED 25.515AED 765.45

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

39 A

Maximum Drain Source Voltage

650 V

Series

CoolSiC

Package Type

TO-247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

0.064 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5.7V

Number of Elements per Chip

1

Transistor Material

Silicon

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more