Infineon CoolSiC Silicon N-Channel MOSFET, 35 A, 650 V, 3-Pin TO-247 IMW65R057M1HXKSA1

RS Stock No.: 232-0392Brand: InfineonManufacturers Part No.: IMW65R057M1HXKSA1
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Technical Document

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

35 A

Maximum Drain Source Voltage

650 V

Series

CoolSiC

Package Type

TO-247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

0.074 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5.7V

Number of Elements per Chip

1

Transistor Material

Silicon

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Stock information temporarily unavailable.

AED 1,197.00

AED 39.90 Each (In a Tube of 30) (ex VAT)

AED 1,256.85

AED 41.895 Each (In a Tube of 30) (inc. VAT)

Infineon CoolSiC Silicon N-Channel MOSFET, 35 A, 650 V, 3-Pin TO-247 IMW65R057M1HXKSA1

30

Available in multiples of 30
30AED 1,197.00
60AED 2,274.30
90AED 3,194.10
120AED 4,258.80
150AED 5,323.50
180AED 6,388.20
210AED 7,452.90
240AED 8,517.60
270AED 9,582.30
300AED 10,647.00
330AED 11,711.70
360AED 12,776.40
390AED 13,841.10
420AED 14,905.80
450AED 15,970.50

AED 1,197.00

AED 39.90 Each (In a Tube of 30) (ex VAT)

AED 1,256.85

AED 41.895 Each (In a Tube of 30) (inc. VAT)

Infineon CoolSiC Silicon N-Channel MOSFET, 35 A, 650 V, 3-Pin TO-247 IMW65R057M1HXKSA1
Stock information temporarily unavailable.

30

Available in multiples of 30
30AED 1,197.00
60AED 2,274.30
90AED 3,194.10
120AED 4,258.80
150AED 5,323.50
180AED 6,388.20
210AED 7,452.90
240AED 8,517.60
270AED 9,582.30
300AED 10,647.00
330AED 11,711.70
360AED 12,776.40
390AED 13,841.10
420AED 14,905.80
450AED 15,970.50

Stock information temporarily unavailable.

Please check again later.

QuantityUnit pricePer Tube
30 - 30AED 39.90AED 1,197.00
60 - 60AED 37.905AED 1,137.15
90+AED 35.49AED 1,064.70

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

35 A

Maximum Drain Source Voltage

650 V

Series

CoolSiC

Package Type

TO-247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

0.074 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5.7V

Number of Elements per Chip

1

Transistor Material

Silicon

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more