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Infineon CoolSiC Silicon N-Channel MOSFET, 24 A, 650 V, 3-Pin TO-247 IMW65R083M1HXKSA1

RS Stock No.: 232-0396Brand: InfineonManufacturers Part No.: IMW65R083M1HXKSA1
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Technical Document

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

24 A

Maximum Drain Source Voltage

650 V

Series

CoolSiC

Package Type

TO-247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

0.111 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5.7V

Number of Elements per Chip

1

Transistor Material

Silicon

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Stock information temporarily unavailable.

AED 757.05

AED 25.235 Each (In a Tube of 30) (ex VAT)

AED 794.90

AED 26.497 Each (In a Tube of 30) (inc. VAT)

Infineon CoolSiC Silicon N-Channel MOSFET, 24 A, 650 V, 3-Pin TO-247 IMW65R083M1HXKSA1

30

Available in multiples of 30
30AED 757.05
60AED 1,439.94
90AED 2,159.91
120AED 2,879.88
150AED 3,368.10
180AED 4,041.72
210AED 4,715.34
240AED 5,388.96
270AED 6,062.58
300AED 6,736.20
330AED 7,409.82
360AED 8,083.44
390AED 8,757.06
420AED 9,430.68
450AED 10,104.30

AED 757.05

AED 25.235 Each (In a Tube of 30) (ex VAT)

AED 794.90

AED 26.497 Each (In a Tube of 30) (inc. VAT)

Infineon CoolSiC Silicon N-Channel MOSFET, 24 A, 650 V, 3-Pin TO-247 IMW65R083M1HXKSA1
Stock information temporarily unavailable.

30

Available in multiples of 30
30AED 757.05
60AED 1,439.94
90AED 2,159.91
120AED 2,879.88
150AED 3,368.10
180AED 4,041.72
210AED 4,715.34
240AED 5,388.96
270AED 6,062.58
300AED 6,736.20
330AED 7,409.82
360AED 8,083.44
390AED 8,757.06
420AED 9,430.68
450AED 10,104.30

Stock information temporarily unavailable.

Please check again later.

quantityUnit pricePer Tube
30 - 30AED 25.235AED 757.05
60 - 120AED 23.999AED 719.97
150+AED 22.454AED 673.62

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

24 A

Maximum Drain Source Voltage

650 V

Series

CoolSiC

Package Type

TO-247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

0.111 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5.7V

Number of Elements per Chip

1

Transistor Material

Silicon

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more