Infineon CoolMOS CP N-Channel MOSFET, 16 A, 650 V, 3-Pin TO-220 FP IPA60R199CPXKSA1

RS Stock No.: 897-7400Brand: InfineonManufacturers Part No.: IPA60R199CPXKSA1
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

16 A

Maximum Drain Source Voltage

650 V

Series

CoolMOS CP

Package Type

TO-220 FP

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

199 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

34 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Width

4.85mm

Transistor Material

Si

Number of Elements per Chip

1

Length

10.65mm

Typical Gate Charge @ Vgs

32 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

16.15mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Product details

Infineon CoolMOS™CP Power MOSFET

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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AED 66.36

AED 16.59 Each (In a Pack of 4) (ex VAT)

AED 69.68

AED 17.42 Each (In a Pack of 4) (inc. VAT)

Infineon CoolMOS CP N-Channel MOSFET, 16 A, 650 V, 3-Pin TO-220 FP IPA60R199CPXKSA1
Select packaging type

AED 66.36

AED 16.59 Each (In a Pack of 4) (ex VAT)

AED 69.68

AED 17.42 Each (In a Pack of 4) (inc. VAT)

Infineon CoolMOS CP N-Channel MOSFET, 16 A, 650 V, 3-Pin TO-220 FP IPA60R199CPXKSA1

Stock information temporarily unavailable.

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Stock information temporarily unavailable.

QuantityUnit pricePer Pack
4 - 16AED 16.59AED 66.36
20 - 36AED 15.75AED 63.00
40 - 96AED 15.068AED 60.27
100 - 196AED 14.122AED 56.49
200+AED 13.282AED 53.13

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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

16 A

Maximum Drain Source Voltage

650 V

Series

CoolMOS CP

Package Type

TO-220 FP

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

199 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

34 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Width

4.85mm

Transistor Material

Si

Number of Elements per Chip

1

Length

10.65mm

Typical Gate Charge @ Vgs

32 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

16.15mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Product details

Infineon CoolMOS™CP Power MOSFET

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more