Infineon Dual SiC N-Channel MOSFET, 187 A, 60 V, 3-Pin PG-TO263-3 IPB018N06NF2SATMA1

RS Stock No.: 262-5855Brand: InfineonManufacturers Part No.: IPB018N06NF2SATMA1
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

187 A

Maximum Drain Source Voltage

60 V

Package Type

PG-TO263-3

Mounting Type

Surface Mount

Pin Count

3

Channel Mode

Enhancement

Number of Elements per Chip

2

Transistor Material

SiC

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Stock information temporarily unavailable.

AED 46.46

AED 9.292 Each (In a Pack of 5) (ex VAT)

AED 48.78

AED 9.757 Each (In a Pack of 5) (inc. VAT)

Infineon Dual SiC N-Channel MOSFET, 187 A, 60 V, 3-Pin PG-TO263-3 IPB018N06NF2SATMA1
Select packaging type

AED 46.46

AED 9.292 Each (In a Pack of 5) (ex VAT)

AED 48.78

AED 9.757 Each (In a Pack of 5) (inc. VAT)

Infineon Dual SiC N-Channel MOSFET, 187 A, 60 V, 3-Pin PG-TO263-3 IPB018N06NF2SATMA1
Stock information temporarily unavailable.
Select packaging type

Stock information temporarily unavailable.

Please check again later.

QuantityUnit pricePer Pack
5 - 20AED 9.292AED 46.46
25 - 45AED 8.40AED 42.00
50 - 120AED 7.822AED 39.11
125 - 245AED 7.245AED 36.22
250+AED 6.72AED 33.60

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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

187 A

Maximum Drain Source Voltage

60 V

Package Type

PG-TO263-3

Mounting Type

Surface Mount

Pin Count

3

Channel Mode

Enhancement

Number of Elements per Chip

2

Transistor Material

SiC

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more