Infineon Dual SiC N-Channel MOSFET, 122 A, 40 V, 3-Pin PG-TO263-3 IPB023N04NF2SATMA1

RS Stock No.: 262-5857Brand: InfineonManufacturers Part No.: IPB023N04NF2SATMA1
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

122 A

Maximum Drain Source Voltage

40 V

Package Type

PG-TO263-3

Mounting Type

Surface Mount

Pin Count

3

Channel Mode

Enhancement

Number of Elements per Chip

2

Transistor Material

SiC

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Stock information temporarily unavailable.

AED 41.21

AED 8.242 Each (In a Pack of 5) (ex VAT)

AED 43.27

AED 8.654 Each (In a Pack of 5) (inc. VAT)

Infineon Dual SiC N-Channel MOSFET, 122 A, 40 V, 3-Pin PG-TO263-3 IPB023N04NF2SATMA1
Select packaging type

AED 41.21

AED 8.242 Each (In a Pack of 5) (ex VAT)

AED 43.27

AED 8.654 Each (In a Pack of 5) (inc. VAT)

Infineon Dual SiC N-Channel MOSFET, 122 A, 40 V, 3-Pin PG-TO263-3 IPB023N04NF2SATMA1
Stock information temporarily unavailable.
Select packaging type

Stock information temporarily unavailable.

Please check again later.

QuantityUnit pricePer Pack
5 - 45AED 8.242AED 41.21
50 - 120AED 7.298AED 36.49
125 - 245AED 6.825AED 34.12
250 - 495AED 6.405AED 32.02
500+AED 5.932AED 29.66

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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

122 A

Maximum Drain Source Voltage

40 V

Package Type

PG-TO263-3

Mounting Type

Surface Mount

Pin Count

3

Channel Mode

Enhancement

Number of Elements per Chip

2

Transistor Material

SiC

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more