Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
120 A
Maximum Drain Source Voltage
60 V
Package Type
PG-TO263-3
Mounting Type
Surface Mount
Pin Count
3
Channel Mode
Enhancement
Number of Elements per Chip
2
Transistor Material
SiC
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Please check again later.
Stock information temporarily unavailable.
AED 7.50
Each (In a Pack of 5) (ex VAT)
AED 7.875
Each (In a Pack of 5) (inc VAT)
Dual SiC N-Channel MOSFET, 120 A, 60 V, 3-Pin PG-TO263-3 Infineon IPB029N06NF2SATMA1
Select packaging type
5
AED 7.50
Each (In a Pack of 5) (ex VAT)
AED 7.875
Each (In a Pack of 5) (inc VAT)
Dual SiC N-Channel MOSFET, 120 A, 60 V, 3-Pin PG-TO263-3 Infineon IPB029N06NF2SATMA1
Stock information temporarily unavailable.
Select packaging type
5
Buy in bulk
quantity | Unit price | Per Pack |
---|---|---|
5 - 45 | AED 7.50 | AED 37.50 |
50 - 120 | AED 6.85 | AED 34.25 |
125 - 245 | AED 6.40 | AED 32.00 |
250 - 495 | AED 5.95 | AED 29.75 |
500+ | AED 5.55 | AED 27.75 |
Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
120 A
Maximum Drain Source Voltage
60 V
Package Type
PG-TO263-3
Mounting Type
Surface Mount
Pin Count
3
Channel Mode
Enhancement
Number of Elements per Chip
2
Transistor Material
SiC