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Infineon N-Channel MOSFET, 120 A, 60 V, 3-Pin D2PAK IPB120N06S4H1ATMA2

RS Stock No.: 218-3032Brand: InfineonManufacturers Part No.: IPB120N06S4H1ATMA2
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Technical Document

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

120 A

Maximum Drain Source Voltage

60 V

Series

OptiMOS™ -T2

Package Type

D2PAK (TO-263)

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

0.002 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Number of Elements per Chip

1

Transistor Material

Si

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Stock information temporarily unavailable.

AED 8,188.50

AED 8.188 Each (On a Reel of 1000) (ex VAT)

AED 8,597.92

AED 8.597 Each (On a Reel of 1000) (inc. VAT)

Infineon N-Channel MOSFET, 120 A, 60 V, 3-Pin D2PAK IPB120N06S4H1ATMA2

1000

Available in multiples of 1000
1000AED 8,188.50
2000AED 16,377.00
3000AED 24,565.50
4000AED 32,754.00
5000AED 40,942.50
6000AED 49,131.00
7000AED 57,319.50
8000AED 65,508.00
9000AED 73,696.50
10000AED 81,885.00
11000AED 90,073.50
12000AED 98,262.00
13000AED 106,450.50
14000AED 114,639.00
15000AED 122,827.50

AED 8,188.50

AED 8.188 Each (On a Reel of 1000) (ex VAT)

AED 8,597.92

AED 8.597 Each (On a Reel of 1000) (inc. VAT)

Infineon N-Channel MOSFET, 120 A, 60 V, 3-Pin D2PAK IPB120N06S4H1ATMA2
Stock information temporarily unavailable.

1000

Available in multiples of 1000
1000AED 8,188.50
2000AED 16,377.00
3000AED 24,565.50
4000AED 32,754.00
5000AED 40,942.50
6000AED 49,131.00
7000AED 57,319.50
8000AED 65,508.00
9000AED 73,696.50
10000AED 81,885.00
11000AED 90,073.50
12000AED 98,262.00
13000AED 106,450.50
14000AED 114,639.00
15000AED 122,827.50

Stock information temporarily unavailable.

Please check again later.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

120 A

Maximum Drain Source Voltage

60 V

Series

OptiMOS™ -T2

Package Type

D2PAK (TO-263)

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

0.002 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Number of Elements per Chip

1

Transistor Material

Si

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more