Infineon OptiMOS™ -T2 N-Channel MOSFET, 120 A, 60 V, 3-Pin D2PAK IPB120N06S4H1ATMA2

RS Stock No.: 218-3032Brand: InfineonManufacturers Part No.: IPB120N06S4H1ATMA2
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Technical Document

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

120 A

Maximum Drain Source Voltage

60 V

Series

OptiMOS™ -T2

Package Type

D2PAK (TO-263)

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

0.002 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Number of Elements per Chip

1

Transistor Material

Si

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Stock information temporarily unavailable.

AED 8,767.50

AED 8.768 Each (On a Reel of 1000) (ex VAT)

AED 9,205.88

AED 9.206 Each (On a Reel of 1000) (inc. VAT)

Infineon OptiMOS™ -T2 N-Channel MOSFET, 120 A, 60 V, 3-Pin D2PAK IPB120N06S4H1ATMA2

1000

Available in multiples of 1000
1000AED 8,767.50
2000AED 17,535.00
3000AED 26,302.50
4000AED 35,070.00
5000AED 43,837.50
6000AED 52,605.00
7000AED 61,372.50
8000AED 70,140.00
9000AED 78,907.50
10000AED 87,675.00
11000AED 96,442.50
12000AED 105,210.00
13000AED 113,977.50
14000AED 122,745.00
15000AED 131,512.50

AED 8,767.50

AED 8.768 Each (On a Reel of 1000) (ex VAT)

AED 9,205.88

AED 9.206 Each (On a Reel of 1000) (inc. VAT)

Infineon OptiMOS™ -T2 N-Channel MOSFET, 120 A, 60 V, 3-Pin D2PAK IPB120N06S4H1ATMA2
Stock information temporarily unavailable.

1000

Available in multiples of 1000
1000AED 8,767.50
2000AED 17,535.00
3000AED 26,302.50
4000AED 35,070.00
5000AED 43,837.50
6000AED 52,605.00
7000AED 61,372.50
8000AED 70,140.00
9000AED 78,907.50
10000AED 87,675.00
11000AED 96,442.50
12000AED 105,210.00
13000AED 113,977.50
14000AED 122,745.00
15000AED 131,512.50

Stock information temporarily unavailable.

Please check again later.

Ideate. Create. Collaborate

JOIN FOR FREE

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

120 A

Maximum Drain Source Voltage

60 V

Series

OptiMOS™ -T2

Package Type

D2PAK (TO-263)

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

0.002 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Number of Elements per Chip

1

Transistor Material

Si

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more