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N-Channel MOSFET, 50 A, 120 V, 3-Pin D2PAK Infineon IPB50N12S3L15ATMA1

RS Stock No.: 214-9021Brand: InfineonManufacturers Part No.: IPB50N12S3L15ATMA1
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

50 A

Maximum Drain Source Voltage

120 V

Series

OptiMOS™-T

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

0.0154 O

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.4V

Number of Elements per Chip

1

Transistor Material

Si

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AED 4.60

Each (On a Reel of 1000) (ex VAT)

AED 4.83

Each (On a Reel of 1000) (inc. VAT)

N-Channel MOSFET, 50 A, 120 V, 3-Pin D2PAK Infineon IPB50N12S3L15ATMA1

AED 4.60

Each (On a Reel of 1000) (ex VAT)

AED 4.83

Each (On a Reel of 1000) (inc. VAT)

N-Channel MOSFET, 50 A, 120 V, 3-Pin D2PAK Infineon IPB50N12S3L15ATMA1
Stock information temporarily unavailable.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

50 A

Maximum Drain Source Voltage

120 V

Series

OptiMOS™-T

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

0.0154 O

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.4V

Number of Elements per Chip

1

Transistor Material

Si

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more