Infineon OptiMOS™ 3 N-Channel MOSFET, 25 A, 250 V, 3-Pin D2PAK IPB600N25N3GATMA1
Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
25 A
Maximum Drain Source Voltage
250 V
Series
OptiMOS™ 3
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
60 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
136 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Length
10.31mm
Typical Gate Charge @ Vgs
22 nC @ 10 V
Maximum Operating Temperature
+175 °C
Width
9.45mm
Transistor Material
Si
Height
4.57mm
Minimum Operating Temperature
-55 °C
Product details
Infineon OptiMOS™3 Power MOSFETs, 100V and over
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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AED 104.48
AED 10.448 Each (In a Pack of 10) (ex VAT)
AED 109.70
AED 10.97 Each (In a Pack of 10) (inc. VAT)
Standard
10
AED 104.48
AED 10.448 Each (In a Pack of 10) (ex VAT)
AED 109.70
AED 10.97 Each (In a Pack of 10) (inc. VAT)
Standard
10
Stock information temporarily unavailable.
Please check again later.
| Quantity | Unit price | Per Pack |
|---|---|---|
| 10 - 10 | AED 10.448 | AED 104.48 |
| 20 - 40 | AED 9.922 | AED 99.22 |
| 50 - 90 | AED 9.502 | AED 95.02 |
| 100 - 240 | AED 9.082 | AED 90.82 |
| 250+ | AED 8.452 | AED 84.52 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
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Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
25 A
Maximum Drain Source Voltage
250 V
Series
OptiMOS™ 3
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
60 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
136 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Length
10.31mm
Typical Gate Charge @ Vgs
22 nC @ 10 V
Maximum Operating Temperature
+175 °C
Width
9.45mm
Transistor Material
Si
Height
4.57mm
Minimum Operating Temperature
-55 °C
Product details
Infineon OptiMOS™3 Power MOSFETs, 100V and over
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products