N-Channel MOSFET, 38 A, 600 V, 3-Pin D2PAK Infineon IPB60R099C6ATMA1
Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
38 A
Maximum Drain Source Voltage
600 V
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
90 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
278 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+150 °C
Length
10.31mm
Typical Gate Charge @ Vgs
119 nC @ 10 V
Width
4.57mm
Transistor Material
Si
Number of Elements per Chip
1
Height
9.45mm
Series
CoolMOS C6
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
0.9V
Product details
Infineon CoolMOS™C6/C7 Power MOSFET
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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AED 33.20
Each (Supplied on a Reel) (ex VAT)
AED 34.86
Each (Supplied on a Reel) (inc VAT)
Production pack (Reel)
2
AED 33.20
Each (Supplied on a Reel) (ex VAT)
AED 34.86
Each (Supplied on a Reel) (inc VAT)
Production pack (Reel)
2
Buy in bulk
| quantity | Unit price | Per Reel |
|---|---|---|
| 2 - 2 | AED 33.20 | AED 66.40 |
| 4 - 18 | AED 31.55 | AED 63.10 |
| 20 - 38 | AED 28.25 | AED 56.50 |
| 40 - 98 | AED 26.90 | AED 53.80 |
| 100+ | AED 24.45 | AED 48.90 |
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Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
38 A
Maximum Drain Source Voltage
600 V
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
90 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
278 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+150 °C
Length
10.31mm
Typical Gate Charge @ Vgs
119 nC @ 10 V
Width
4.57mm
Transistor Material
Si
Number of Elements per Chip
1
Height
9.45mm
Series
CoolMOS C6
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
0.9V
Product details
Infineon CoolMOS™C6/C7 Power MOSFET
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products