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Infineon CoolMOS™ Silicon N-Channel MOSFET, 31 A, 650 V, 3-Pin TO 263 IPB60R099P7ATMA1

RS Stock No.: 222-4653Brand: InfineonManufacturers Part No.: IPB60R099P7ATMA1
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

31 A

Maximum Drain Source Voltage

650 V

Series

CoolMOS™

Package Type

TO 263

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

0.099 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Number of Elements per Chip

1

Transistor Material

Silicon

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Stock information temporarily unavailable.

AED 9,502.50

AED 9.502 Each (On a Reel of 1000) (ex VAT)

AED 9,977.62

AED 9.977 Each (On a Reel of 1000) (inc. VAT)

Infineon CoolMOS™ Silicon N-Channel MOSFET, 31 A, 650 V, 3-Pin TO 263 IPB60R099P7ATMA1

AED 9,502.50

AED 9.502 Each (On a Reel of 1000) (ex VAT)

AED 9,977.62

AED 9.977 Each (On a Reel of 1000) (inc. VAT)

Infineon CoolMOS™ Silicon N-Channel MOSFET, 31 A, 650 V, 3-Pin TO 263 IPB60R099P7ATMA1
Stock information temporarily unavailable.

Stock information temporarily unavailable.

Please check again later.

Ideate. Create. Collaborate

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  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

31 A

Maximum Drain Source Voltage

650 V

Series

CoolMOS™

Package Type

TO 263

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

0.099 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Number of Elements per Chip

1

Transistor Material

Silicon

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more