N-Channel MOSFET, 23.8 A, 650 V, 3-Pin D2PAK Infineon IPB60R160P6ATMA1

RS Stock No.: 130-0894PBrand: InfineonManufacturers Part No.: IPB60R160P6ATMA1
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

23.8 A

Maximum Drain Source Voltage

650 V

Package Type

D2PAK (TO-263)

Series

CoolMOS P6

Series

CoolMOS™ P6

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

160 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Minimum Gate Threshold Voltage

3.5V

Maximum Power Dissipation

176 W

Maximum Gate Source Voltage

-30 V, +30 V

Maximum Operating Temperature

+150 °C

Length

10.31mm

Typical Gate Charge @ Vgs

44 nC @ 10 V

Width

4.57mm

Number of Elements per Chip

1

Height

9.45mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

0.9V

Product details

Infineon CoolMOS™E6/P6 series Power MOSFET

The Infineon range of CoolMOSE6 and P6 series MOSFETs. These highly efficient devices can be used in several applications including Power Factor Correction (PFC), lighting and consumer devices as well as solar, telecoms and servers.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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AED 14.80

Each (Supplied on a Reel) (ex VAT)

AED 15.54

Each (Supplied on a Reel) (inc VAT)

N-Channel MOSFET, 23.8 A, 650 V, 3-Pin D2PAK Infineon IPB60R160P6ATMA1
Select packaging type

AED 14.80

Each (Supplied on a Reel) (ex VAT)

AED 15.54

Each (Supplied on a Reel) (inc VAT)

N-Channel MOSFET, 23.8 A, 650 V, 3-Pin D2PAK Infineon IPB60R160P6ATMA1
Stock information temporarily unavailable.
Select packaging type

Buy in bulk

quantityUnit pricePer Reel
2 - 8AED 14.80AED 29.60
10 - 98AED 12.55AED 25.10
100 - 498AED 10.85AED 21.70
500 - 998AED 9.20AED 18.40
1000+AED 8.55AED 17.10

Ideate. Create. Collaborate

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

23.8 A

Maximum Drain Source Voltage

650 V

Package Type

D2PAK (TO-263)

Series

CoolMOS P6

Series

CoolMOS™ P6

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

160 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Minimum Gate Threshold Voltage

3.5V

Maximum Power Dissipation

176 W

Maximum Gate Source Voltage

-30 V, +30 V

Maximum Operating Temperature

+150 °C

Length

10.31mm

Typical Gate Charge @ Vgs

44 nC @ 10 V

Width

4.57mm

Number of Elements per Chip

1

Height

9.45mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

0.9V

Product details

Infineon CoolMOS™E6/P6 series Power MOSFET

The Infineon range of CoolMOSE6 and P6 series MOSFETs. These highly efficient devices can be used in several applications including Power Factor Correction (PFC), lighting and consumer devices as well as solar, telecoms and servers.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more