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N-Channel MOSFET, 64 A, 250 V, 3-Pin D2PAK Infineon IPB64N25S320ATMA1

RS Stock No.: 170-2295Brand: InfineonManufacturers Part No.: IPB64N25S320ATMA1
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Technical Document

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

64 A

Maximum Drain Source Voltage

250 V

Series

OptiMOS™-T

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

20 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

300 W

Transistor Configuration

Single

Maximum Gate Source Voltage

20 V

Number of Elements per Chip

1

Width

10.25mm

Maximum Operating Temperature

+175 °C

Length

10mm

Typical Gate Charge @ Vgs

67 nC @ 10 V

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Height

4.4mm

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AED 16.00

Each (On a Reel of 1000) (ex VAT)

AED 16.80

Each (On a Reel of 1000) (inc. VAT)

N-Channel MOSFET, 64 A, 250 V, 3-Pin D2PAK Infineon IPB64N25S320ATMA1

1000

Available in multiples of 1000
1000AED 16,000.00
2000AED 32,000.00
3000AED 48,000.00
4000AED 64,000.00
5000AED 80,000.00
6000AED 96,000.00
7000AED 112,000.00
8000AED 128,000.00
9000AED 144,000.00
10000AED 160,000.00
11000AED 176,000.00
12000AED 192,000.00
13000AED 208,000.00
14000AED 224,000.00
15000AED 240,000.00

AED 16.00

Each (On a Reel of 1000) (ex VAT)

AED 16.80

Each (On a Reel of 1000) (inc. VAT)

N-Channel MOSFET, 64 A, 250 V, 3-Pin D2PAK Infineon IPB64N25S320ATMA1
Stock information temporarily unavailable.

1000

Available in multiples of 1000
1000AED 16,000.00
2000AED 32,000.00
3000AED 48,000.00
4000AED 64,000.00
5000AED 80,000.00
6000AED 96,000.00
7000AED 112,000.00
8000AED 128,000.00
9000AED 144,000.00
10000AED 160,000.00
11000AED 176,000.00
12000AED 192,000.00
13000AED 208,000.00
14000AED 224,000.00
15000AED 240,000.00

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

64 A

Maximum Drain Source Voltage

250 V

Series

OptiMOS™-T

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

20 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

300 W

Transistor Configuration

Single

Maximum Gate Source Voltage

20 V

Number of Elements per Chip

1

Width

10.25mm

Maximum Operating Temperature

+175 °C

Length

10mm

Typical Gate Charge @ Vgs

67 nC @ 10 V

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Height

4.4mm

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more