Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
64 A
Maximum Drain Source Voltage
250 V
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
20 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
300 W
Transistor Configuration
Single
Maximum Gate Source Voltage
20 V
Number of Elements per Chip
1
Width
10.25mm
Maximum Operating Temperature
+175 °C
Length
10mm
Typical Gate Charge @ Vgs
67 nC @ 10 V
Series
IPB64N25S3-20
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Height
4.4mm
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AED 25.30
Each (In a Pack of 5) (ex VAT)
AED 26.565
Each (In a Pack of 5) (inc VAT)
5
AED 25.30
Each (In a Pack of 5) (ex VAT)
AED 26.565
Each (In a Pack of 5) (inc VAT)
5
Buy in bulk
quantity | Unit price | Per Pack |
---|---|---|
5 - 5 | AED 25.30 | AED 126.50 |
10 - 20 | AED 21.50 | AED 107.50 |
25 - 45 | AED 20.20 | AED 101.00 |
50 - 120 | AED 18.70 | AED 93.50 |
125+ | AED 17.45 | AED 87.25 |
Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
64 A
Maximum Drain Source Voltage
250 V
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
20 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
300 W
Transistor Configuration
Single
Maximum Gate Source Voltage
20 V
Number of Elements per Chip
1
Width
10.25mm
Maximum Operating Temperature
+175 °C
Length
10mm
Typical Gate Charge @ Vgs
67 nC @ 10 V
Series
IPB64N25S3-20
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Height
4.4mm