Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
143 A
Maximum Drain Source Voltage
40 V
Package Type
PG-TO252-3
Mounting Type
Surface Mount
Pin Count
3
Channel Mode
Enhancement
Number of Elements per Chip
2
Transistor Material
SiC
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Please check again later.
Stock information temporarily unavailable.
AED 2.55
Each (On a Reel of 2000) (ex VAT)
AED 2.678
Each (On a Reel of 2000) (inc VAT)
Dual SiC N-Channel MOSFET, 143 A, 40 V, 3-Pin PG-TO252-3 Infineon IPD023N04NF2SATMA1
2000
AED 2.55
Each (On a Reel of 2000) (ex VAT)
AED 2.678
Each (On a Reel of 2000) (inc VAT)
Dual SiC N-Channel MOSFET, 143 A, 40 V, 3-Pin PG-TO252-3 Infineon IPD023N04NF2SATMA1
Stock information temporarily unavailable.
2000
Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
143 A
Maximum Drain Source Voltage
40 V
Package Type
PG-TO252-3
Mounting Type
Surface Mount
Pin Count
3
Channel Mode
Enhancement
Number of Elements per Chip
2
Transistor Material
SiC