Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
139 A
Maximum Drain Source Voltage
60 V
Package Type
PG-TO252-3
Mounting Type
Surface Mount
Pin Count
3
Channel Mode
Enhancement
Number of Elements per Chip
2
Transistor Material
SiC
Stock information temporarily unavailable.
Please check again later.
Stock information temporarily unavailable.
AED 6.70
Each (In a Pack of 5) (ex VAT)
AED 7.035
Each (In a Pack of 5) (inc VAT)
Dual SiC N-Channel MOSFET, 139 A, 60 V, 3-Pin PG-TO252-3 Infineon IPD028N06NF2SATMA1
Select packaging type
5
AED 6.70
Each (In a Pack of 5) (ex VAT)
AED 7.035
Each (In a Pack of 5) (inc VAT)
Dual SiC N-Channel MOSFET, 139 A, 60 V, 3-Pin PG-TO252-3 Infineon IPD028N06NF2SATMA1
Stock information temporarily unavailable.
Select packaging type
5
Buy in bulk
quantity | Unit price | Per Pack |
---|---|---|
5 - 45 | AED 6.70 | AED 33.50 |
50 - 120 | AED 5.75 | AED 28.75 |
125 - 245 | AED 5.45 | AED 27.25 |
250 - 495 | AED 5.25 | AED 26.25 |
500+ | AED 4.25 | AED 21.25 |
Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
139 A
Maximum Drain Source Voltage
60 V
Package Type
PG-TO252-3
Mounting Type
Surface Mount
Pin Count
3
Channel Mode
Enhancement
Number of Elements per Chip
2
Transistor Material
SiC