Dual SiC N-Channel MOSFET, 120 A, 60 V, 3-Pin PG-TO252-3 Infineon IPD038N06NF2SATMA1

RS Stock No.: 262-5867PBrand: InfineonManufacturers Part No.: IPD038N06NF2SATMA1
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

120 A

Maximum Drain Source Voltage

60 V

Package Type

PG-TO252-3

Mounting Type

Surface Mount

Pin Count

3

Channel Mode

Enhancement

Number of Elements per Chip

2

Transistor Material

SiC

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AED 3.45

Each (Supplied on a Reel) (ex VAT)

AED 3.622

Each (Supplied on a Reel) (inc VAT)

Dual SiC N-Channel MOSFET, 120 A, 60 V, 3-Pin PG-TO252-3 Infineon IPD038N06NF2SATMA1
Select packaging type

AED 3.45

Each (Supplied on a Reel) (ex VAT)

AED 3.622

Each (Supplied on a Reel) (inc VAT)

Dual SiC N-Channel MOSFET, 120 A, 60 V, 3-Pin PG-TO252-3 Infineon IPD038N06NF2SATMA1
Stock information temporarily unavailable.
Select packaging type

Buy in bulk

quantityUnit pricePer Reel
10 - 90AED 3.45AED 34.50
100 - 240AED 3.35AED 33.50
250 - 490AED 3.25AED 32.50
500 - 990AED 3.15AED 31.50
1000+AED 2.20AED 22.00

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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

120 A

Maximum Drain Source Voltage

60 V

Package Type

PG-TO252-3

Mounting Type

Surface Mount

Pin Count

3

Channel Mode

Enhancement

Number of Elements per Chip

2

Transistor Material

SiC

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more