Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
50 A
Maximum Drain Source Voltage
150 V
Package Type
DPAK (TO-252)
Series
IPD200N15N3 G
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
20 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
150 W
Transistor Configuration
Single
Maximum Gate Source Voltage
20 V
Length
10.36mm
Typical Gate Charge @ Vgs
23 nC @ 10 V
Maximum Operating Temperature
+175 °C
Width
9.45mm
Number of Elements per Chip
1
Forward Diode Voltage
1.2V
Height
4.57mm
Minimum Operating Temperature
-55 °C
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AED 10.05
Each (In a Pack of 10) (ex VAT)
AED 10.552
Each (In a Pack of 10) (inc VAT)
10
AED 10.05
Each (In a Pack of 10) (ex VAT)
AED 10.552
Each (In a Pack of 10) (inc VAT)
10
Buy in bulk
quantity | Unit price | Per Pack |
---|---|---|
10 - 10 | AED 10.05 | AED 100.50 |
20 - 40 | AED 8.05 | AED 80.50 |
50 - 90 | AED 7.55 | AED 75.50 |
100 - 240 | AED 7.05 | AED 70.50 |
250+ | AED 6.55 | AED 65.50 |
Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
50 A
Maximum Drain Source Voltage
150 V
Package Type
DPAK (TO-252)
Series
IPD200N15N3 G
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
20 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
150 W
Transistor Configuration
Single
Maximum Gate Source Voltage
20 V
Length
10.36mm
Typical Gate Charge @ Vgs
23 nC @ 10 V
Maximum Operating Temperature
+175 °C
Width
9.45mm
Number of Elements per Chip
1
Forward Diode Voltage
1.2V
Height
4.57mm
Minimum Operating Temperature
-55 °C