Infineon OptiMOS™ 2 N-Channel MOSFET, 27 A, 100 V, 3-Pin DPAK IPD33CN10NGATMA1

RS Stock No.: 215-2506Brand: InfineonManufacturers Part No.: IPD33CN10NGATMA1
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

27 A

Maximum Drain Source Voltage

100 V

Package Type

DPAK (TO-252)

Series

OptiMOS™ 2

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

0.033 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Transistor Material

Si

Number of Elements per Chip

1

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Stock information temporarily unavailable.

AED 52.50

AED 2.625 Each (In a Pack of 20) (ex VAT)

AED 55.12

AED 2.756 Each (In a Pack of 20) (inc. VAT)

Infineon OptiMOS™ 2 N-Channel MOSFET, 27 A, 100 V, 3-Pin DPAK IPD33CN10NGATMA1
Select packaging type

AED 52.50

AED 2.625 Each (In a Pack of 20) (ex VAT)

AED 55.12

AED 2.756 Each (In a Pack of 20) (inc. VAT)

Infineon OptiMOS™ 2 N-Channel MOSFET, 27 A, 100 V, 3-Pin DPAK IPD33CN10NGATMA1
Stock information temporarily unavailable.
Select packaging type

Stock information temporarily unavailable.

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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

27 A

Maximum Drain Source Voltage

100 V

Package Type

DPAK (TO-252)

Series

OptiMOS™ 2

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

0.033 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Transistor Material

Si

Number of Elements per Chip

1

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more