N-Channel MOSFET, 50 A, 100 V, 3 + 2 Tab-Pin DPAK Infineon IPD50N10S3L16ATMA1

RS Stock No.: 170-2270Brand: InfineonManufacturers Part No.: IPD50N10S3L16ATMA1
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

50 A

Maximum Drain Source Voltage

100 V

Package Type

TO-252

Mounting Type

Surface Mount

Pin Count

3 + 2 Tab

Maximum Drain Source Resistance

19.9 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.4V

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

100 W

Transistor Configuration

Single

Maximum Gate Source Voltage

20 V

Width

7.22mm

Number of Elements per Chip

1

Typical Gate Charge @ Vgs

49 nC @ 10 V

Maximum Operating Temperature

+175 °C

Length

6.5mm

Height

2.3mm

Series

IPD50N10S3L-16

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Automotive Standard

AEC-Q101

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AED 3.15

Each (On a Reel of 2500) (ex VAT)

AED 3.308

Each (On a Reel of 2500) (inc VAT)

N-Channel MOSFET, 50 A, 100 V, 3 + 2 Tab-Pin DPAK Infineon IPD50N10S3L16ATMA1

AED 3.15

Each (On a Reel of 2500) (ex VAT)

AED 3.308

Each (On a Reel of 2500) (inc VAT)

N-Channel MOSFET, 50 A, 100 V, 3 + 2 Tab-Pin DPAK Infineon IPD50N10S3L16ATMA1
Stock information temporarily unavailable.

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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

50 A

Maximum Drain Source Voltage

100 V

Package Type

TO-252

Mounting Type

Surface Mount

Pin Count

3 + 2 Tab

Maximum Drain Source Resistance

19.9 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.4V

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

100 W

Transistor Configuration

Single

Maximum Gate Source Voltage

20 V

Width

7.22mm

Number of Elements per Chip

1

Typical Gate Charge @ Vgs

49 nC @ 10 V

Maximum Operating Temperature

+175 °C

Length

6.5mm

Height

2.3mm

Series

IPD50N10S3L-16

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Automotive Standard

AEC-Q101