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N-Channel MOSFET, 50 A, 120 V, 3-Pin DPAK Infineon IPD50N12S3L15ATMA1

RS Stock No.: 214-9038Brand: InfineonManufacturers Part No.: IPD50N12S3L15ATMA1
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

50 A

Maximum Drain Source Voltage

120 V

Series

OptiMOS™-T

Package Type

TO-252

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

0.015 O

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.4V

Number of Elements per Chip

1

Transistor Material

Si

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AED 7.05

Each (In a Pack of 10) (ex VAT)

AED 7.402

Each (In a Pack of 10) (inc. VAT)

N-Channel MOSFET, 50 A, 120 V, 3-Pin DPAK Infineon IPD50N12S3L15ATMA1
Select packaging type

AED 7.05

Each (In a Pack of 10) (ex VAT)

AED 7.402

Each (In a Pack of 10) (inc. VAT)

N-Channel MOSFET, 50 A, 120 V, 3-Pin DPAK Infineon IPD50N12S3L15ATMA1
Stock information temporarily unavailable.
Select packaging type

Buy in bulk

quantityUnit pricePer Pack
10 - 10AED 7.05AED 70.50
20 - 90AED 6.60AED 66.00
100 - 240AED 6.20AED 62.00
250 - 490AED 5.85AED 58.50
500+AED 5.75AED 57.50

Ideate. Create. Collaborate

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

50 A

Maximum Drain Source Voltage

120 V

Series

OptiMOS™-T

Package Type

TO-252

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

0.015 O

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.4V

Number of Elements per Chip

1

Transistor Material

Si

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more