N-Channel MOSFET, 90 A, 40 V, 3-Pin DPAK Infineon IPD90N04S304ATMA1

RS Stock No.: 753-3030Brand: InfineonManufacturers Part No.: IPD90N04S304ATMA1
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Technical Document

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

90 A

Maximum Drain Source Voltage

40 V

Package Type

DPAK (TO-252)

Series

OptiMOS T

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

3.6 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2.1V

Maximum Power Dissipation

136 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

60 nC @ 10 V

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Width

6.22mm

Transistor Material

Si

Length

6.5mm

Height

2.3mm

Minimum Operating Temperature

-55 °C

Product details

Infineon OptiMOS™T Power MOSFETs

OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.

N-channel - Enhancement mode
Automotive AEC Q101 qualified
MSL1 up to 260°C peak reflow
175°C operating temperature
Green product (RoHS compliant)

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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AED 8.20

Each (In a Pack of 2) (ex VAT)

AED 8.61

Each (In a Pack of 2) (inc VAT)

N-Channel MOSFET, 90 A, 40 V, 3-Pin DPAK Infineon IPD90N04S304ATMA1
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 2.

Production -

Available in multiples of 2.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

2

Available in multiples of 2
2AED 16.40
4AED 32.80
6AED 49.20
8AED 65.60
10AED 82.00
12AED 98.40
14AED 114.80
16AED 131.20
18AED 147.60
20AED 142.00
22AED 156.20
24AED 170.40
26AED 184.60
28AED 198.80
30AED 213.00

AED 8.20

Each (In a Pack of 2) (ex VAT)

AED 8.61

Each (In a Pack of 2) (inc VAT)

N-Channel MOSFET, 90 A, 40 V, 3-Pin DPAK Infineon IPD90N04S304ATMA1
Stock information temporarily unavailable.
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 2.

Production -

Available in multiples of 2.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

2

Available in multiples of 2
2AED 16.40
4AED 32.80
6AED 49.20
8AED 65.60
10AED 82.00
12AED 98.40
14AED 114.80
16AED 131.20
18AED 147.60
20AED 142.00
22AED 156.20
24AED 170.40
26AED 184.60
28AED 198.80
30AED 213.00

Buy in bulk

quantityUnit pricePer Pack
2 - 18AED 8.20AED 16.40
20+AED 7.10AED 14.20

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

90 A

Maximum Drain Source Voltage

40 V

Package Type

DPAK (TO-252)

Series

OptiMOS T

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

3.6 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2.1V

Maximum Power Dissipation

136 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

60 nC @ 10 V

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Width

6.22mm

Transistor Material

Si

Length

6.5mm

Height

2.3mm

Minimum Operating Temperature

-55 °C

Product details

Infineon OptiMOS™T Power MOSFETs

OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.

N-channel - Enhancement mode
Automotive AEC Q101 qualified
MSL1 up to 260°C peak reflow
175°C operating temperature
Green product (RoHS compliant)

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more