Infineon OptiMOS™ -T2 Dual N-Channel MOSFET, 20 A, 60 V, 8-Pin SuperSO8 5 x 6 Dual IPG20N06S4L11AATMA1

RS Stock No.: 214-9062Brand: InfineonManufacturers Part No.: IPG20N06S4L11AATMA1
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

20 A

Maximum Drain Source Voltage

60 V

Package Type

SuperSO8 5 x 6 Dual

Series

OptiMOS™ -T2

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

0.0112 O

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.2V

Transistor Material

Si

Number of Elements per Chip

2

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Stock information temporarily unavailable.

AED 63.00

AED 6.30 Each (In a Pack of 10) (ex VAT)

AED 66.15

AED 6.615 Each (In a Pack of 10) (inc. VAT)

Infineon OptiMOS™ -T2 Dual N-Channel MOSFET, 20 A, 60 V, 8-Pin SuperSO8 5 x 6 Dual IPG20N06S4L11AATMA1
Select packaging type

AED 63.00

AED 6.30 Each (In a Pack of 10) (ex VAT)

AED 66.15

AED 6.615 Each (In a Pack of 10) (inc. VAT)

Infineon OptiMOS™ -T2 Dual N-Channel MOSFET, 20 A, 60 V, 8-Pin SuperSO8 5 x 6 Dual IPG20N06S4L11AATMA1
Stock information temporarily unavailable.
Select packaging type

Stock information temporarily unavailable.

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QuantityUnit pricePer Pack
10 - 40AED 6.30AED 63.00
50 - 90AED 5.985AED 59.85
100 - 240AED 5.722AED 57.22
250 - 490AED 5.46AED 54.60
500+AED 5.092AED 50.92

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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

20 A

Maximum Drain Source Voltage

60 V

Package Type

SuperSO8 5 x 6 Dual

Series

OptiMOS™ -T2

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

0.0112 O

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.2V

Transistor Material

Si

Number of Elements per Chip

2

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more