N-Channel MOSFET, 88 A, 200 V, 3-Pin TO-220 Infineon IPP110N20NAAKSA1
Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
88 A
Maximum Drain Source Voltage
200 V
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
11 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
300 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
10.36mm
Typical Gate Charge @ Vgs
65 nC @ 10 V
Width
4.57mm
Transistor Material
Si
Series
OptiMOS 3
Forward Diode Voltage
1.2V
Height
15.95mm
Minimum Operating Temperature
-55 °C
Product details
Infineon OptiMOS™3 Power MOSFETs, 100V and over
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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AED 90.09
AED 45.045 Each (In a Pack of 2) (ex VAT)
AED 94.59
AED 47.297 Each (In a Pack of 2) (inc. VAT)
Standard
2
AED 90.09
AED 45.045 Each (In a Pack of 2) (ex VAT)
AED 94.59
AED 47.297 Each (In a Pack of 2) (inc. VAT)
Standard
2
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Please check again later.
| Quantity | Unit price | Per Pack |
|---|---|---|
| 2 - 18 | AED 45.045 | AED 90.09 |
| 20 - 98 | AED 38.062 | AED 76.12 |
| 100 - 198 | AED 31.50 | AED 63.00 |
| 200 - 498 | AED 30.555 | AED 61.11 |
| 500+ | AED 29.768 | AED 59.54 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
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Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
88 A
Maximum Drain Source Voltage
200 V
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
11 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
300 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
10.36mm
Typical Gate Charge @ Vgs
65 nC @ 10 V
Width
4.57mm
Transistor Material
Si
Series
OptiMOS 3
Forward Diode Voltage
1.2V
Height
15.95mm
Minimum Operating Temperature
-55 °C
Product details
Infineon OptiMOS™3 Power MOSFETs, 100V and over
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products