Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
69 A
Maximum Drain Source Voltage
100 V
Series
OptiMOS™ 2
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
15.8 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.4V
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
125 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
4.57mm
Transistor Material
Si
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
10.36mm
Typical Gate Charge @ Vgs
58 nC @ 10 V
Height
15.95mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Product details
Infineon OptiMOS™2 Power MOSFET Family
Infineons OptiMOS™2 N-Channel family offers the industry's lowest on-state resistance inside their voltage group. The Power MOSFET series can be used in many applications including high frequency Telecom, Datacom, solar, low voltage drives and Server Power Supplies. The OptiMOS 2 product family ranges from 20V and over and offers a selection of different package types.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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AED 3.80
Each (Supplied in a Tube) (ex VAT)
AED 3.99
Each (Supplied in a Tube) (inc. VAT)
Production pack (Tube)
5
AED 3.80
Each (Supplied in a Tube) (ex VAT)
AED 3.99
Each (Supplied in a Tube) (inc. VAT)
Production pack (Tube)
5
Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
69 A
Maximum Drain Source Voltage
100 V
Series
OptiMOS™ 2
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
15.8 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.4V
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
125 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
4.57mm
Transistor Material
Si
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
10.36mm
Typical Gate Charge @ Vgs
58 nC @ 10 V
Height
15.95mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Product details
Infineon OptiMOS™2 Power MOSFET Family
Infineons OptiMOS™2 N-Channel family offers the industry's lowest on-state resistance inside their voltage group. The Power MOSFET series can be used in many applications including high frequency Telecom, Datacom, solar, low voltage drives and Server Power Supplies. The OptiMOS 2 product family ranges from 20V and over and offers a selection of different package types.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.