N-Channel MOSFET, 61 A, 250 V, 3-Pin TO-220 Infineon IPP220N25NFDAKSA1
Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
61 A
Maximum Drain Source Voltage
250 V
Series
OptiMOS FD
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
22 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
300 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
10.36mm
Typical Gate Charge @ Vgs
65 nC @ 10 V
Width
4.57mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Height
15.95mm
Product details
Infineon OptiMOS™ FD Power MOSFET
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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AED 25.30
Each (In a Pack of 2) (ex VAT)
AED 26.565
Each (In a Pack of 2) (inc. VAT)
Standard
2
AED 25.30
Each (In a Pack of 2) (ex VAT)
AED 26.565
Each (In a Pack of 2) (inc. VAT)
Standard
2
Buy in bulk
| quantity | Unit price | Per Pack |
|---|---|---|
| 2 - 8 | AED 25.30 | AED 50.60 |
| 10 - 18 | AED 22.00 | AED 44.00 |
| 20 - 48 | AED 20.75 | AED 41.50 |
| 50 - 98 | AED 19.25 | AED 38.50 |
| 100+ | AED 17.75 | AED 35.50 |
Ideate. Create. Collaborate
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Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
61 A
Maximum Drain Source Voltage
250 V
Series
OptiMOS FD
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
22 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
300 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
10.36mm
Typical Gate Charge @ Vgs
65 nC @ 10 V
Width
4.57mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Height
15.95mm
Product details
Infineon OptiMOS™ FD Power MOSFET
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products