N-Channel MOSFET, 38 A, 650 V, 3-Pin TO-220 Infineon IPP60R099C6XKSA1

RS Stock No.: 898-6895Brand: InfineonManufacturers Part No.: IPP60R099C6XKSA1
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

38 A

Maximum Drain Source Voltage

650 V

Series

CoolMOS™ C6

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

99 mΩ

Channel Mode

Enhancement

Maximum Power Dissipation

35 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

10.65mm

Typical Gate Charge @ Vgs

119 nC @ 10 V

Width

4.9mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

0.9V

Height

16.15mm

Product details

Infineon CoolMOS™C6/C7 Power MOSFET

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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AED 25.80

Each (In a Pack of 2) (ex VAT)

AED 27.09

Each (In a Pack of 2) (inc. VAT)

N-Channel MOSFET, 38 A, 650 V, 3-Pin TO-220 Infineon IPP60R099C6XKSA1
Select packaging type

AED 25.80

Each (In a Pack of 2) (ex VAT)

AED 27.09

Each (In a Pack of 2) (inc. VAT)

N-Channel MOSFET, 38 A, 650 V, 3-Pin TO-220 Infineon IPP60R099C6XKSA1
Stock information temporarily unavailable.
Select packaging type

Buy in bulk

quantityUnit pricePer Pack
2 - 8AED 25.80AED 51.60
10 - 18AED 22.95AED 45.90
20 - 48AED 21.40AED 42.80
50 - 98AED 20.10AED 40.20
100+AED 18.60AED 37.20

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

38 A

Maximum Drain Source Voltage

650 V

Series

CoolMOS™ C6

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

99 mΩ

Channel Mode

Enhancement

Maximum Power Dissipation

35 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

10.65mm

Typical Gate Charge @ Vgs

119 nC @ 10 V

Width

4.9mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

0.9V

Height

16.15mm

Product details

Infineon CoolMOS™C6/C7 Power MOSFET

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more