N-Channel MOSFET, 24 A, 650 V, 3-Pin TO-220 Infineon IPP60R160C6XKSA1

RS Stock No.: 897-7337Brand: InfineonManufacturers Part No.: IPP60R160C6XKSA1
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

24 A

Maximum Drain Source Voltage

650 V

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

160 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

176 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

10.36mm

Typical Gate Charge @ Vgs

75 nC @ 10 V

Width

4.57mm

Transistor Material

Si

Series

CoolMOS C6

Minimum Operating Temperature

-55 °C

Height

15.95mm

Product details

Infineon CoolMOS™C6/C7 Power MOSFET

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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AED 20.05

Each (In a Pack of 4) (ex VAT)

AED 21.052

Each (In a Pack of 4) (inc VAT)

N-Channel MOSFET, 24 A, 650 V, 3-Pin TO-220 Infineon IPP60R160C6XKSA1
Select packaging type

AED 20.05

Each (In a Pack of 4) (ex VAT)

AED 21.052

Each (In a Pack of 4) (inc VAT)

N-Channel MOSFET, 24 A, 650 V, 3-Pin TO-220 Infineon IPP60R160C6XKSA1
Stock information temporarily unavailable.
Select packaging type

Buy in bulk

quantityUnit pricePer Pack
4 - 16AED 20.05AED 80.20
20 - 96AED 16.40AED 65.60
100 - 196AED 14.25AED 57.00
200 - 496AED 13.55AED 54.20
500+AED 12.65AED 50.60

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

24 A

Maximum Drain Source Voltage

650 V

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

160 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

176 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

10.36mm

Typical Gate Charge @ Vgs

75 nC @ 10 V

Width

4.57mm

Transistor Material

Si

Series

CoolMOS C6

Minimum Operating Temperature

-55 °C

Height

15.95mm

Product details

Infineon CoolMOS™C6/C7 Power MOSFET

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more